IRFR812TRPBF

PD -97773 IRFR812TRPbF Applications Zero Voltage Switching SMPS Uninterruptible Power Supplies Motor Control applications HEXFET® Power MOSFET VDSS RDS(on) typ. Trr typ. 500V 1.85Ω 75ns D ID 3.6A Features and Benefits Fast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in simpler drive requirements. Higher Gate voltage threshold offers improved noise immunity. Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current Max. 3.6 2.3 14.4 78 0.63 ± 20 32 -55 to + 150 300 (1.6mm from case ) 10lb in (1.1N m) S G D-Pak IRFR812TRPbF Units A W W/°C V V/ns °C ™ PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw e Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton x x Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– 3.6 A ––– 14.4 ––– 75 94 135 220 3.2 1.2 110 140 200 330 4.8 V ns nC A Conditions MOSFET symbol showing the integral reverse G S D Ù p-n junction diode. TJ = 25°C, IS = 3.6A, VGS = 0V TJ = 25°C,...