PD - 91286D
POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number
IRFY130C IRFY130CM
IRFY130C,IRFY130CM 100V, ...
PD - 91286D
POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number
IRFY130C IRFY130CM
IRFY130C,IRFY130CM 100V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
®
R DS(on)
0.18 Ω 0.18 Ω
ID
14.4A 14.4A
Eyelets
Ceramic Ceramic
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET
transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET
transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
TO-257AA
Features:
n n n n n n
Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Ideally Suited for Space Level Applications
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor G...