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TPC8026 Dataheets PDF



Part Number TPC8026
Manufacturers Toshiba
Logo Toshiba
Description N-Channel MOSFET
Datasheet TPC8026 DatasheetTPC8026 Datasheet (PDF)

TPC8026 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 2.

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TPC8026 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 13 52 1.9 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1B Drain power dissipation W Weight: 0.08 g (typ.) 1.0 W Circuit Configuration 8 7 6 5 44 13 0.048 150 −55 to 150 mJ A mJ °C °C 1 2 3 4 Note 1, Note 2, Note 3 and Note 4: See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 Free Datasheet http://www.Datasheet4U.com TPC8026 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 °C/W Marking (Note 5) TPC8026 Part No. (or abbreviation code) Lot No. Note 6 Note 1: Ensure that the channel temperature does not exceed 150°C. (b) Device mounted on a glass-epoxy board (b) Note 2: (a) Device mounted on a glass-epoxy board (a) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.2 mH, IAR = 13 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: • on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Note 6: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 Free Datasheet http://www.Datasheet4U.com TPC8026 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“miller”) charge tf toff Qg Qgs1 Qgd VDD ∼ − 24 V, VGS = 10 V, ID = 13 A Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V 4.7 Ω Test Condition VGS = ±20 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 6.5 A VGS = 10 V, ID = 6.5 A VDS = 10 V, ID = 6.5 A Min ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ Max ±100 Unit nA μA 10 ⎯ ⎯ 30 10 1.3 ⎯ ⎯ V V mΩ S 2.5 10 6.6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 7.5 5.1 30 1800 370 570 15 28 21 54 42 6.5 14 15 ⎯ VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ ⎯ ⎯ pF ID = 6.5 A VOUT RL = 2.3 Ω ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ VDD ∼ − 15 V < Duty = 1%, tw = 10 μs nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ Min ⎯ ⎯ Typ. ⎯ ⎯ Max 52 −1.2 Unit A V IDR = 13 A, VGS = 0 V 3 2009-09-29 Free Datasheet http://www.Datasheet4U.com TPC8026 ID – VDS 50 10 40 6 4.5 8 4 Common source Ta = 25°C Pulse test 20 10 4 3.8 4.5 6 8 12 ID – VDS Common source Ta = 25°C Pulse test 3.6 (A) 3.8 30 3.6 20 3.4 10 3.3 3.2 3.1 0 0 VGS = 3 V 0.4 0.8 1.2 1.6 2 ID ID (A.


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