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BTA30-600CW3G Dataheets PDF



Part Number BTA30-600CW3G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Silicon Bidirectional Thyristors
Datasheet BTA30-600CW3G DatasheetBTA30-600CW3G Datasheet (PDF)

BTA30-600CW3G, BTA30-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features http://onsemi.com • • • • • • • • • Blocking Voltage to 800 Volts On-State Current Rating of 30 Amperes RMS at 95°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt − 500 V/ms minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Pack.

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BTA30-600CW3G, BTA30-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features http://onsemi.com • • • • • • • • • Blocking Voltage to 800 Volts On-State Current Rating of 30 Amperes RMS at 95°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt − 500 V/ms minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package − Internally Isolated High Commutating dI/dt − 4.0 A/ms minimum at 125°C Internally Isolated (2500 VRMS) These are Pb−Free Devices Rating Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 30 400 A A Value Unit V 1 2 3 TRIACS 30 AMPERES RMS 600 thru 800 VOLTS MT2 G 4 MT1 MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTA30−600CW3G BTA30−800CW3G On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 95°C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ(initial) = 25°C) Circuit Fusing Consideration (t = 8.3 ms) Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 8.3 ms) Peak Gate Current (TJ = 125°C, t ≤ 20 ms) Average Gate Power (TJ = 125°C) Operating Junction Temperature Range Storage Temperature Range RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C) BTA30−xCWG AYWW TO−220AB CASE 221A STYLE 12 = 6 or 8 = Assembly Location = Year = Work Week = Pb−Free Package x A Y WW G I2t VDSM/ VRSM IGM PG(AV) TJ Tstg Viso 667 VDRM/VRRM +100 4.0 0.5 − 40 to +125 − 40 to +150 2500 A2sec V A W °C °C V 1 2 3 4 PIN ASSIGNMENT Main Terminal 1 Main Terminal 2 Gate No Connection Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ORDERING INFORMATION Device BTA30−600CW3G BTA30−800CW3G Package TO−220AB (Pb−Free) TO−220AB (Pb−Free) Shipping 50 Units / Rail 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 1 1 Publication Order Number: BTA30−600CW3/D Free Datasheet http://www.Datasheet4U.com BTA30−600CW3G, BTA30−800CW3G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case (AC) Junction−to−Ambient Symbol RqJC RqJA TL Value 1.8 60 260 Unit °C/W °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless.


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