Document
BTA30-600CW3G, BTA30-800CW3G Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
Features http://onsemi.com
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Blocking Voltage to 800 Volts On-State Current Rating of 30 Amperes RMS at 95°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt − 500 V/ms minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package − Internally Isolated High Commutating dI/dt − 4.0 A/ms minimum at 125°C Internally Isolated (2500 VRMS) These are Pb−Free Devices
Rating Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 30 400 A A Value Unit V 1 2 3
TRIACS 30 AMPERES RMS 600 thru 800 VOLTS
MT2 G 4 MT1
MARKING DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTA30−600CW3G BTA30−800CW3G On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 95°C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ(initial) = 25°C) Circuit Fusing Consideration (t = 8.3 ms) Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 8.3 ms) Peak Gate Current (TJ = 125°C, t ≤ 20 ms) Average Gate Power (TJ = 125°C) Operating Junction Temperature Range Storage Temperature Range RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C) BTA30−xCWG AYWW
TO−220AB CASE 221A STYLE 12 = 6 or 8 = Assembly Location = Year = Work Week = Pb−Free Package
x A Y WW G
I2t VDSM/ VRSM IGM PG(AV) TJ Tstg Viso
667 VDRM/VRRM +100 4.0 0.5 − 40 to +125 − 40 to +150 2500
A2sec V A W °C °C V 1 2 3 4
PIN ASSIGNMENT
Main Terminal 1 Main Terminal 2 Gate No Connection
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device BTA30−600CW3G BTA30−800CW3G Package TO−220AB (Pb−Free) TO−220AB (Pb−Free) Shipping 50 Units / Rail 50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 1
1
Publication Order Number: BTA30−600CW3/D
Free Datasheet http://www.Datasheet4U.com
BTA30−600CW3G, BTA30−800CW3G
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Case (AC) Junction−to−Ambient Symbol RqJC RqJA TL Value 1.8 60 260 Unit °C/W °C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless.