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TLP731 Dataheets PDF



Part Number TLP731
Manufacturers Toshiba
Logo Toshiba
Description Photocoupler
Datasheet TLP731 DatasheetTLP731 Datasheet (PDF)

TOSHIBA Photocoupler IRED & Photo-Transistor TLP731, TLP732 TLP731,TLP732 Office Machine Household Use Equipment Solid State Relay Switching Power Supply The TOSHIBA TLP731 and TLP732 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. TLP732 is no-base internal connection for high-EMI environments. • Collector-emitter voltage: 55V (min) • Current transfer ratio: 50% (min) Rank GB: 100% (min) • Isolation voltage: 4000.

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TOSHIBA Photocoupler IRED & Photo-Transistor TLP731, TLP732 TLP731,TLP732 Office Machine Household Use Equipment Solid State Relay Switching Power Supply The TOSHIBA TLP731 and TLP732 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. TLP732 is no-base internal connection for high-EMI environments. • Collector-emitter voltage: 55V (min) • Current transfer ratio: 50% (min) Rank GB: 100% (min) • Isolation voltage: 4000 Vrms (min) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 • VDE-approved: EN 60747-5-5 (Note 1) Note 1 : When a VDE approved type is needed, please designate the Option (D4). Unit: mm TOSHIBA 11-7A8S Weight: 0.35 g (typ.) Pin Configurations (top view) • Creepage distance Clearance Insulation thickness : 7.0mm (min) : 7.0 mm (min) : 0.5 mm (min) © 2019 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1985-02 2019-06-03 Current Transfer Ratio Classification (Note 1) Current Transfer Ratio (%) (IC / IF) IF = 5 mA, VCE = 5 V, Ta = 25°C Min Max Marking Of Classification Blank 50 600 Blank, Y■, YE, G, G■, GR, B, BL, GB Rank Y 50 150 YE, Y■ Rank GR 100 300 GR, G, G■ Rank BL 200 600 BL, B Rank GB 100 600 GB, GR, G, G■, BL, B, Note: The product with the Rank Y and BL are limited in production. For details, please contact your nearest Toshiba sales representative. Note 1: Ex. rank GB: TLP731 (GB) Note: Application type name for certification test, please use standard product type name, i.e. TLP731(GB): TLP731 TLP732(GB): TLP732 TLP731,TLP732 © 2019 2 Toshiba Electronic Devices & Storage Corporation 2019-06-03 Absolute Maximum Ratings (Ta = 25°C) TLP731,TLP732 Characteristic Symbol Rating Unit Detector LE D Forward current Forward current derating (Ta ≥ 39°C) Peak forward current (100μs pulse, 100pps) Power dissipation Power dissipation derating (Ta ≥ 39°C) Reverse voltage Junction temperature Collector-emitter voltage Collector-base voltage (TLP731) Emitter-collector voltage Emitter-base voltage (TLP731) Collector current Power dissipation Power dissipation derating (Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) IF ΔIF / °C IFP PD ΔPD / °C VR Tj VCEO VCBO VECO VEBO IC PC ΔPC / °C Tj Tstg Topr Tsol PT ΔPT / °C BVS 60 -0.7 1 70 -0.82 5 125 55 80 7 7 50 150 -1.5 125 -55 to 125 -55 to 100 260 250 -2.5 4000 mA mA / °C A mW mW / °C V °C V V V V mA mW mW / °C °C °C °C °C mW mW / °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage Forward current Collector current Operating temperature VCC IF IC Topr ― 5 24 V ― 16 25 mA ― 1 10 mA -25 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 3 Toshiba Electronic Devices & Storage Corporation 2019-06-03 Electrical Characteristics (Ta = 25°C) TLP731,TLP732 LE D Characteristic Symbol Test Condition Forward voltage Reverse current Capacitance Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage (TLP731) (TLP731) Collector dark current Collector dark current (TLP731) Collector dark current (TLP731) DC forward current gain (TLP731) Capacitance collector to emitter VF IR CT V(BR)CEO V(BR)ECO V(BR)CBO V(BR)EBO ICEO ICER ICBO hFE CCE IF = 10 mA VR = 5 V V = 0 V, f = 1 MHz IC = 0.5 mA IE = 0.1mA IC = 0.1mA IE = 0.1mA VCE = 24 V VCE = 24 V, Ta = 85 °C VCE = 24 V, Ta = 85 °C RBE = 1 MΩ VCB = 10 V VCE = 5 V, IC = 0.5 mA V = 0 V, f = 1 MHz Min Typ. Max Unit 1.0 1.15 1.3 V ― ― 10 μA ― 30 ― pF 55 ― ― V 7 ― ― V 80.


2SC2060 TLP731 TLP732


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