Document
TOSHIBA Photocoupler IRED & Photo-Transistor
TLP731, TLP732
TLP731,TLP732
Office Machine Household Use Equipment Solid State Relay Switching Power Supply
The TOSHIBA TLP731 and TLP732 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. TLP732 is no-base internal connection for high-EMI environments.
• Collector-emitter voltage: 55V (min) • Current transfer ratio: 50% (min)
Rank GB: 100% (min) • Isolation voltage: 4000 Vrms (min) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349 • VDE-approved: EN 60747-5-5 (Note 1)
Note 1 : When a VDE approved type is needed, please designate the Option (D4).
Unit: mm
TOSHIBA
11-7A8S
Weight: 0.35 g (typ.)
Pin Configurations (top view)
• Creepage distance Clearance Insulation thickness
: 7.0mm (min) : 7.0 mm (min) : 0.5 mm (min)
© 2019
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
1985-02
2019-06-03
Current Transfer Ratio
Classification (Note 1)
Current Transfer Ratio (%) (IC / IF)
IF = 5 mA, VCE = 5 V, Ta = 25°C
Min
Max
Marking Of Classification
Blank
50
600
Blank, Y■, YE, G, G■, GR, B, BL, GB
Rank Y
50
150
YE, Y■
Rank GR
100
300
GR, G, G■
Rank BL
200
600
BL, B
Rank GB
100
600
GB, GR, G, G■, BL, B,
Note: The product with the Rank Y and BL are limited in production. For details, please contact your nearest Toshiba sales representative.
Note 1: Ex. rank GB: TLP731 (GB)
Note: Application type name for certification test, please use standard product type name, i.e. TLP731(GB): TLP731 TLP732(GB): TLP732
TLP731,TLP732
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-03
Absolute Maximum Ratings (Ta = 25°C)
TLP731,TLP732
Characteristic
Symbol
Rating
Unit
Detector
LE D
Forward current Forward current derating (Ta ≥ 39°C) Peak forward current (100μs pulse, 100pps) Power dissipation Power dissipation derating (Ta ≥ 39°C) Reverse voltage Junction temperature Collector-emitter voltage Collector-base voltage (TLP731) Emitter-collector voltage Emitter-base voltage (TLP731) Collector current Power dissipation Power dissipation derating (Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1)
IF ΔIF / °C
IFP PD ΔPD / °C VR Tj VCEO VCBO VECO VEBO IC PC ΔPC / °C Tj Tstg Topr Tsol PT ΔPT / °C BVS
60 -0.7
1 70 -0.82 5 125 55 80 7 7 50 150 -1.5 125 -55 to 125 -55 to 100 260 250 -2.5 4000
mA mA / °C
A mW mW / °C
V °C V V V V mA mW mW / °C °C °C °C °C mW mW / °C Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min Typ. Max Unit
Supply voltage Forward current Collector current Operating temperature
VCC IF IC
Topr
―
5
24
V
―
16
25
mA
―
1
10
mA
-25
―
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.
© 2019
3
Toshiba Electronic Devices & Storage Corporation
2019-06-03
Electrical Characteristics (Ta = 25°C)
TLP731,TLP732
LE D
Characteristic
Symbol
Test Condition
Forward voltage
Reverse current
Capacitance
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
(TLP731) (TLP731)
Collector dark current
Collector dark current (TLP731)
Collector dark current (TLP731)
DC forward current gain (TLP731)
Capacitance collector to emitter
VF IR CT V(BR)CEO V(BR)ECO V(BR)CBO V(BR)EBO
ICEO
ICER ICBO hFE CCE
IF = 10 mA VR = 5 V V = 0 V, f = 1 MHz IC = 0.5 mA
IE = 0.1mA
IC = 0.1mA
IE = 0.1mA VCE = 24 V VCE = 24 V, Ta = 85 °C VCE = 24 V, Ta = 85 °C RBE = 1 MΩ VCB = 10 V
VCE = 5 V, IC = 0.5 mA V = 0 V, f = 1 MHz
Min Typ. Max Unit
1.0 1.15 1.3
V
―
―
10
μA
―
30
―
pF
55
―
―
V
7
―
―
V
80.