FCD900N60Z

FCD900N60Z — N-Channel SuperFET® II MOSFET December 2013 FCD900N60Z N-Channel SuperFET® II MOSFET 600 V, 4.5 A, 900 mΩ Features 650 V @ TJ = 150°C Typ. RDS(on) = 820 mΩ Ultra Low Gate Charge (Typ. Qg = 13 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 49 pF) 100% Avalanche Tested ESD Improved Capacity RoHS Compliant Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Applications LCD / LED / PDP TV and Monitor Lighting Solar Inverter Charger D D G G S D-PAK S FCD900N60Z 600 ±20 (f > 1Hz) ±30 4.5 3.5 (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) - Derate Above 25oC (TC = 25oC) 13.5 47.5 1 0.52 100 20 52 0.42 -55 to +150 300 Unit V V V A A mJ A mJ V/ns W W/oC oC oC Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Peak ...