Document
FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET
April 2009
UniFETTM
FDP8N60ZU / FDPF8N60ZUT
N-Channel MOSFET, FRFET
600V, 6.5A, 1.35Ω Features
• RDS(on) = 1.15mΩ ( Typ.) @ VGS = 10V, ID = 3.25A • Low gate charge ( Typ. 20nC) • Low Crss ( Typ. 10pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G
G DS
TO-220 FDP Series
o
GD S
TO-220F FDPF Series
S
MOSFET Maximum Ratings TC = 25 C unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 135 1.05 -55 to +150 300 6.5 3.9 26 420 6.5 13.5 20 34.5 0.28 FDP8N60ZU FDPF8N60ZUT 600 ±30 6.5* 3.9* 26* Units V V A A mJ A mJ V/ns W W/oC
o o
Single Pulsed Avalanche Energy
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP8N60ZU 0.95 0.5 62.5 FDPF8N60ZUT 3.6 62.5
o
Units C/W
©2009 Fairchild Semiconductor Corporation FDP8N60ZU / FDPF8N60ZUT Rev. A
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www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET
Package Marking and Ordering Information
Device Marking FDP8N60ZU FDPF8N60ZUT Device FDP8N60ZU FDPF8N60ZUT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250μA, VGS = 0V, TJ = 25oC ID = 250μA, Referenced to 25oC VDS = 600V, VGS = 0V VDS = 480V, TC = 125oC VGS = ±30V, VDS = 0V 600 0.7 25 250 ±10 V V/oC μA μA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA VGS = 10V, ID = 3.25A VDS = 40V, ID = 3.25A 3.0 1.15 7 5.0 1.35 V Ω S
Dynamic Characteristics
Ciss Coss Crss Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer.