Document
FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
February 2012
UniFET-IITM
FDP8N50NZF / FDPF8N50NZF
N-Channel MOSFET
500V, 7A, 1Ω Features
• RDS(on) = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A • Low Gate Charge ( Typ. 14nC) • Low Crss ( Typ. 5pF) • Fast Switching • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant
Description
This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
D
G
G D S
TO-220 FDP Series
o
GDS
TO-220F FDPF Series (potted)
S
MOSFET Maximum Ratings TC = 25 C unless otherwise noted
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 130 1 -55 to +150 300 7 4.2 28 93 7 13 20 40 0.32 FDP8N50NZF FDPF8N50NZF 500 ±25 7* 4.2* 28* Units V V A A mJ A mJ V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP8N50NZF 0.96 0.5 62.5 FDPF8N50NZF Units 3.1 62.5
o
C/W
©2012 Fairchild Semiconductor Corporation FDP8N50NZF / FDPF8N50NZF Rev. C0
1
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
Package Marking and Ordering Information
Device Marking FDP8N50NZF FDPF8N50NF Device FDP8N50NZF FDPF8N50NZF Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250μA, VGS = 0V, TC = 25oC ID = 250μA, Referenced to VDS = 500V, VGS = 0V VDS = 400V, TC = 125oC VGS = ±25V, VDS = 0V 25oC 500 0.5 10 100 ±10 V V/oC μA μA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA VGS = 10V, ID = 3.5A VDS = 20V, ID = 3.5A
(Note 4)
3.0 -
0.85 6.3
5.0 1 -
V Ω S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 400V,ID = 7A VGS = 10V
(Note 4, 5)
VDS = 25V, VGS = 0V f = 1MHz
-
565 80 5 14 4 6
735 105 8 18 -
pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID =7A RG = 25Ω, VGS = 10V
(Note 4, 5)
-
17 34 43 27
45 80 95 60
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 7A VGS = 0V, ISD = 7A dIF/dt = 100A/μs
(Note 4)
-
80 0.3
7 28 1.5 -
A A V ns μC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 3.8mH, IAS = 7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP8N50NZF / FDPF8N50NZF Rev. C0
2
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
30 10
ID, Drain Current[A]
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
30
10
ID, Drain Current[A]
150 C
o
-55 C
o
1
1
25 C
o
0.1
*Notes: 1. 250μs Pulse Test 2. TC = 25 C
o
0.03 0.03
*Notes: 1. VDS = 20V 2. 250μs Pulse Test
0.1 1 VDS, Drain-Source Voltage[V]
10
20
0.1 2 4 6 8 VGS, Gate-Source Voltage[V] 10
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
2.0
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
100
RDS(ON) [Ω], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
1.6
150 C 25 C
o
o
1.