PROCESS
CPD30V
Dual Switching Diode
Dual, Common Cathode, High Speed Switching Diode Chip
PROCESS DETAILS Die Size Die Thickness Anode 1 Bonding Pad Area Anode 2 Bonding Pad Area Top Side Metalization Back Side Metalization 15.4 x 15.4 MILS 7.1 MILS 5.9 x 5.9 x 8.3 MILS 5.9 x 5.9 x 8.3 MILS Al - 30,000Å Au-As - 10,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER...
