CPZ33R

PROCESS CPZ33R Transient Voltage Suppressor 12 Volt Quad TVS Chip PROCESS DETAILS Die Size Die Thickness Cathode Bonding Pad Areas (4) Top Side Metalization Back Side Metalization 14.2 x 14.2 MILS 3.9 MILS 4.7 MILS DIAMETER EACH Al - 13,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 84,926 PRINCIPAL DEVICE TYPE CMNTVS12V R0 (3-January 2012) w w w. c e n t r a l s e m i . c o m http://www.Datasheet4U.com PROCESS CPZ33R Typical Electrical Characteristics R0 (3-January 2012) w w w. c e n t r a l s e m i . c o m http://www.Datasheet4U.com ...