DKI10299

100 V, 28 A, 20.4 mΩ Low RDS(ON) N ch Trench Power MOSFET DKI10299 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ---------------------------------------------------------- 28 A  RDS(ON) -------- 30.0 mΩ max. (VGS = 10 V, ID = 14.2 A)  Qg------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.5 V Gate Drive  100 % UIL Tested  RoHS Compliant Package TO-252 (4) D (1) (2) (3) GDS (3) (2) (1) SDG Applications  DC-DC converters  Synchronous Rectification  Power Supplies Equivalent circuit D(2)(4) G(1) S(3) Not to scale Absolute Maximum Ratings  Unless otherwise specified, TA = 25 °C Parameter Symbol Drain to Source Voltage VDS Gate to Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) IDM IS ISM Single Pulse Avalanche Energy EAS Ava...