CHA4092

CHA4092 20-30GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA4092 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Typical on wafer measurements : Main Features þ Broadband performances : 20-30GHz þ 22 dBm output power ( 1dB gain comp. ) þ 17 dB ± 1.5 dB gain þ Chip size : 1.65 X 2.15 X 0.10 mm 20 15 10 5 0 Gain (dB) -5 -10 -15 -20 -25 -30 15 20 25 30 35 IN OUT Frequency (GHz) Main Characteristics Tamb. = 25°C Symbol Fop G P1dB Id Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Bias current Min 20 16 Typ Max 30 Unit GHz dB dBm 17 22 700 900 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA40928021 1/4 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 http://www.Datasheet4U.com CHA4092 Tamb = +25°C, Vd1,2,3 = 3.5Volts Symbol Fop G ∆G Is P1db VSWRin 20-30GHz High Power Amplifier Electrical Characteristics for Broadband Operation Parameter Operating frequency range (1) Small sig...