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BLU30 Dataheets PDF



Part Number BLU30
Manufacturers Philips
Logo Philips
Description UHF power transistor
Datasheet BLU30 DatasheetBLU30 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 http://www.Datasheet4U.com Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. FEATURES: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliability • int.

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DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 http://www.Datasheet4U.com Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. FEATURES: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliability • internal matching to achieve an optimum wideband capability and high power gain BLU30/12 The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA Envelope Mode of operation Collector-emitter voltage (d.c.) Frequency Load power Power gain Collector efficiency Heatsink temperature PIN CONFIGURATION PINNING PIN 1 handbook, halfpage SOT-119 class-B; c.w. VCE f PL GP ηC Th > > 12,5 V 470 MHz 30 W 6,0 dB 55 % 25 °C DESCRIPTION emitter emitter base collector emitter emitter 1 2 2 3 4 5 6 3 4 5 6 MSB006 Fig.1 Simplified outline, SOT119A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. January 1985 2 http://www.Datasheet4U.com Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation f > 1 MHz; Tmb = 25 °C Storage temperature Operating junction temperature Ptot (r.f.) Tstg Tj max. max. IC ICM max. max. VCBOM VCEO VEBO max. max. max. BLU30/12 36 V 16,5 V 4 V 6 A 18 A 65 W 200 °C −65 to + 150 °C handbook, halfpage 10 MDA324 handbook, halfpage 100 Ptot MDA325 IC (A) Th = 70 °C Tmb = 25 °C (W) 80 60 1 40 II I 20 10−1 1 10 VCE (V) 102 0 0 40 80 120 Th (°C) 160 I Continuous operation (f > 1 MHz) II Short-time operation during mismatch; (f > 1 MHz. Fig.2 D.C. SOAR. Rth mb-h = 0,2 K/W Fig.3 Power/temperature derating curves THERMAL RESISTANCE (dissipation = 45 W; Tmb = 25 °C) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(r.f.) Rth mb-h max. max. 2,45 K/W 0,2 K/W January 1985 3 http://www.Datasheet4U.com Philips Semiconductors Product specification UHF power transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-base breakdown voltage IC = 50 mA; open emitter Collector-emitter breakdown voltage IC = 100 mA; open base Emitter-base breakdown voltage IE = 10 mA; open collector Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 Ω D.C. current gain IC = 4 A; VCE = 10 V Collector capacitance at f = 1 MHz(1) IE = ie = 0; VCB = 12,5 V Feed-back capacitance at f = 1 IC = 0; VCE = 12,5 V Collector-flange capacitance Note 1. Device mounted in SOT-119 envelope without inputmatching. MHz(1) Cre Ccf typ. typ. Cc typ. hFE > typ. ESBR > ICES < V(BR)EBO > V(BR)CEO > V(BR)CBO > BLU30/12 36 V 16,5 V 4 V 22 mA 8 mJ 15 60 85 pF 52 pF 3 pF handbook, halfpage 80 MDA326 handbook, halfpage hFE 60 VCE = 12.5 V 10 V 250 Cc MDA327 (pF) 210 170 40 130 20 90 0 0 4 8 12 IC (A) 16 50 0 4 8 12 16 20 VCB (V) Fig.4 Tj = 25 °C; typ. values. Fig.5 IE = ie = 0; f = 1 MHz; typ. values. January 1985 4 http://www.Datasheet4U.com Philips Semiconductors Product specification UHF power transistor APPLICATION INFORMATION Mode of operation Collector-emitter voltage (d.c.) Frequency Load power Power gain Collector efficiency Heatsink temperature BLU30/12 In narrow-band test circuit; class-B; c.w. VCE f PL Gp ηC Th > typ. > typ. 12,5 V 470 MHz 30 W 6,0 dB 7,4 dB 55 % 66 % 25 °C handbook, full pagewidth C1 50 Ω C2 C3 ,, ,, L1 R1 T.U.T. L4 L2 C4 ,, L6 R2 C5 C8 50 Ω C6 C7 L3 L5 MDA328 +VCC Fig.6 Class-B test circuit at f = 470 MHz. List of components: C1 = C2 = C7 = C8 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) C3 = C6 = 3,9 pF ceramic capacitor (500 V) C4 = 100 pF feed-through capacitor C5 = 100 nF polyester film capacitor L1 = stripline (24,0 mm × 6,7 mm) L2 = 10 turns closely wound enamelled Cu-wire (0,4 mm); int. diam. 4 mm L3 = 2 turns enamelled Cu-wire (0,6 mm); Ferroxcube tube core, grade 3B5 (cat. no. 4313 020 15170) L4 = 12,6 nH; 2,5 turns enamelled Cu-wire (0,7 mm); int. diam. 4 mm; length 3 mm; leads 2 × 5 mm L5 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) L6 = stripline (28,4 mm × 6,7 mm) R1 = R2 = 10 Ω carbon resistor L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (εr = 2,74); thickness 1⁄16 inch. Component lay-out and printed-circuit board for 470 MHz test circuit are shown in Figs 7 and 8. January 1985 5 http://w.


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