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DISCRETE SEMICONDUCTORS
DATA SHEET
BLU30/12 UHF power transistor
Product specification January 1985
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Philips Semiconductors
Product specification
UHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. FEATURES: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliability • internal matching to achieve an optimum wideband capability and high power gain
BLU30/12
The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange.
QUICK REFERENCE DATA Envelope Mode of operation Collector-emitter voltage (d.c.) Frequency Load power Power gain Collector efficiency Heatsink temperature PIN CONFIGURATION PINNING PIN 1
handbook, halfpage
SOT-119 class-B; c.w. VCE f PL GP ηC Th > > 12,5 V 470 MHz 30 W 6,0 dB 55 % 25 °C
DESCRIPTION emitter emitter base collector emitter emitter
1
2
2 3 4 5 6
3
4
5
6
MSB006
Fig.1 Simplified outline, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
January 1985
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Philips Semiconductors
Product specification
UHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation f > 1 MHz; Tmb = 25 °C Storage temperature Operating junction temperature Ptot (r.f.) Tstg Tj max. max. IC ICM max. max. VCBOM VCEO VEBO max. max. max.
BLU30/12
36 V 16,5 V 4 V 6 A 18 A 65 W 200 °C
−65 to + 150 °C
handbook, halfpage
10
MDA324
handbook, halfpage
100 Ptot
MDA325
IC (A) Th = 70 °C
Tmb = 25 °C
(W) 80
60 1 40 II I
20
10−1
1
10
VCE (V)
102
0 0 40 80 120 Th (°C) 160
I Continuous operation (f > 1 MHz) II Short-time operation during mismatch; (f > 1 MHz.
Fig.2 D.C. SOAR. Rth mb-h = 0,2 K/W
Fig.3 Power/temperature derating curves
THERMAL RESISTANCE (dissipation = 45 W; Tmb = 25 °C) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(r.f.) Rth mb-h max. max. 2,45 K/W 0,2 K/W
January 1985
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http://www.Datasheet4U.com
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-base breakdown voltage IC = 50 mA; open emitter Collector-emitter breakdown voltage IC = 100 mA; open base Emitter-base breakdown voltage IE = 10 mA; open collector Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 Ω D.C. current gain IC = 4 A; VCE = 10 V Collector capacitance at f = 1 MHz(1) IE = ie = 0; VCB = 12,5 V Feed-back capacitance at f = 1 IC = 0; VCE = 12,5 V Collector-flange capacitance Note 1. Device mounted in SOT-119 envelope without inputmatching. MHz(1) Cre Ccf typ. typ. Cc typ. hFE > typ. ESBR > ICES < V(BR)EBO > V(BR)CEO > V(BR)CBO >
BLU30/12
36 V 16,5 V 4 V 22 mA 8 mJ 15 60 85 pF 52 pF 3 pF
handbook, halfpage
80
MDA326
handbook, halfpage
hFE 60
VCE = 12.5 V 10 V
250 Cc
MDA327
(pF) 210
170 40 130 20 90
0 0 4 8 12 IC (A) 16
50 0 4 8 12 16 20 VCB (V)
Fig.4 Tj = 25 °C; typ. values.
Fig.5 IE = ie = 0; f = 1 MHz; typ. values.
January 1985
4
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Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION Mode of operation Collector-emitter voltage (d.c.) Frequency Load power Power gain Collector efficiency Heatsink temperature
BLU30/12
In narrow-band test circuit; class-B; c.w. VCE f PL Gp ηC Th > typ. > typ. 12,5 V 470 MHz 30 W 6,0 dB 7,4 dB 55 % 66 % 25 °C
handbook, full pagewidth
C1 50 Ω C2
C3
,, ,,
L1 R1
T.U.T.
L4 L2 C4
,,
L6 R2 C5
C8 50 Ω C6 C7
L3 L5
MDA328
+VCC
Fig.6 Class-B test circuit at f = 470 MHz.
List of components: C1 = C2 = C7 = C8 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) C3 = C6 = 3,9 pF ceramic capacitor (500 V) C4 = 100 pF feed-through capacitor C5 = 100 nF polyester film capacitor L1 = stripline (24,0 mm × 6,7 mm) L2 = 10 turns closely wound enamelled Cu-wire (0,4 mm); int. diam. 4 mm L3 = 2 turns enamelled Cu-wire (0,6 mm); Ferroxcube tube core, grade 3B5 (cat. no. 4313 020 15170) L4 = 12,6 nH; 2,5 turns enamelled Cu-wire (0,7 mm); int. diam. 4 mm; length 3 mm; leads 2 × 5 mm L5 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) L6 = stripline (28,4 mm × 6,7 mm) R1 = R2 = 10 Ω carbon resistor L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (εr = 2,74); thickness 1⁄16 inch. Component lay-out and printed-circuit board for 470 MHz test circuit are shown in Figs 7 and 8.
January 1985
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