BLV91

DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 http://www.Datasheet4U.com Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. FEATURES BLV91/SL diffused emitter-ballasting resistors for an optimum temperature profile. gold metallization ensures excellent reliability. the device can be applied at rated load power, without an external heatsink, when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base. QUICK REFERENCE DATA RF performance in a common-emitter class-B circuit MODE OF OPERATION narrow band; CW T °C Tmb = 25 Ta = Ta = Note 1. Device mounted on a printed-circuit board (see Fig.6). 25(1) 25(1) VCE V 12.5 12.5 9.6 f MHz 900 900 900 PL W 2 1.5 1.5 Gp dB > 6.5 > 6.5 typ. 6.6 ηC % > 50 > 50 typ. 60 PIN CONFIGURATION PINNING - SOT172D. PIN 1 2 1 DESCRIPTION emitter base collector emitter handbook, halfpage 3 4 3 2 4 Top view MSB007 Fig.1 Simplified outline. SOT172D. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. September 1988 2 http://www.Datasheet4U.com Philips Semiconductors Product specification UHF power transistor RATINGS Limiting value...