2N3866 TRANSISTOR Datasheet

2N3866 Datasheet, PDF, Equivalent


Part Number

2N3866

Description

NPN SILICON HIGH FREQUENCY TRANSISTOR

Manufacture

Central Semiconductor

Total Page 2 Pages
Datasheet
Download 2N3866 Datasheet


2N3866
2N3866
2N3866A
NPN SILICON
HIGH FREQUENCY TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3866 and
2N3866A are Silicon NPN RF Transistors, mounted
in a hermetically sealed package, designed for high
frequency amplifier and oscillator applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Continuous Base Current
IB
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJC
55
30
3.5
0.4
2.0
5.0
-65 to +200
35
UNITS
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEO
VCE=28V
ICEV
VCE=55V, VBE(OFF)=1.5V
ICEV
VCE=30V, VBE(OFF)=1.5V, TC=200°C
IEBO
VEB=3.5V
BVCER
IC=5.0mA, RBE=10Ω
55
BVCBO
IC=500μA
55
BVCEO
IC=5.0mA
30
BVEBO
IE=100μA
3.5
VCE(SAT) IC=100mA, IB=20mA
hFE VCE=5.0V, IC=50mA (2N3866)
10
hFE VCE=5.0V, IC=50mA (2N3866A)
25
hFE VCE=5.0V, IC=360mA
5.0
fT
VCE=15V, IC=50mA, f=200MHz (2N3866)
500
fT
VCE=15V, IC=50mA, f=200MHz (2N3866A)
800
Cob VCB=28V, IE=0, f=1.0MHz
GPE
VCC=28V, Pout=1.0W, f=400MHz (Figure 1)
η VCC=28V, Pout=1.0W, f=400MHz (Figure 1)
MAX
20
0.1
5.0
0.1
1.0
200
200
3.0
10
45
UNITS
μA
mA
mA
mA
V
V
V
V
V
MHz
MHz
pF
dB
%
R2 (15-September 2010)
http://www.Datasheet4U.com

2N3866
2N3866
2N3866A
NPN SILICON
HIGH FREQUENCY TRANSISTOR
Figure 1. 400MHz Test Circuit
TO-39 CASE - MECHANICAL OUTLINE
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R2 (15-September 2010)
http://www.Datasheet4U.com


Features 2N3866 2N3866A NPN SILICON HIGH FREQUENC Y TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL S EMICONDUCTOR 2N3866 and 2N3866A are Sil icon NPN RF Transistors, mounted in a h ermetically sealed package, designed fo r high frequency amplifier and oscillat or applications. MARKING: FULL PART NUM BER TO-39 CASE MAXIMUM RATINGS: (TA=25 °C unless otherwise noted) SYMBOL Coll ector-Base Voltage VCBO Collector-Emitt er Voltage VCEO Emitter-Base Voltage Co ntinuous Collector Current Continuous B ase Current Power Dissipation (TC=25°C ) Operating and Storage Junction Temper ature Thermal Resistance VEBO IC IB PD TJ, Tstg ΘJC 55 30 3.5 0.4 2.0 5.0 -6 5 to +200 35 MAX 20 0.1 5.0 0.1 55 55 3 0 3.5 1.0 10 25 5.0 500 800 3.0 10 45 2 00 200 UNITS V V V A A W °C °C/W UNI TS μA mA mA mA V V V V V ELECTRICAL C HARACTERISTICS: (TA=25°C unless otherw ise noted) SYMBOL TEST CONDITIONS MIN I CEO VCE=28V ICEV ICEV IEBO BVCER BVCBO BVCEO BVEBO VCE(SAT) hFE hFE hFE fT fT Cob GPE η VCE=55V, VBE(OFF)=1.5.
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