SI2305
20V P-Channel Enhancement Mode MOSFET
VDS= -20V RDS(ON),
[email protected],
[email protected] RDS(ON),
[email protected],
[email protected]
130mΩ 190mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions
D
G
S
SOT-23(PACKAGE)
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1)
Symbol
Limit
Unit
VDS VGS ID IDM
2)
-20 ±8 -2.2 -8 1.25 0.8 -55 to 150 100 166
o
V
A
TA = 25o TA = 75oC
2)
Maximum Power Dissipation
PD TJ, Tstg
RthJA
W
o
Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted)
C
Junction-to-Ambient Thermal Resistance (PCB mounted) 3)
C/W
Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. 3) Surface Mounted on FR4 Board.
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
http://www.Datasheet4U.com
SI2305
20V P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current 0 Gate Body Leakage Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate...