SI2305

SI2305 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), [email protected], [email protected] RDS(ON), [email protected], [email protected] 130mΩ 190mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1) Symbol Limit Unit VDS VGS ID IDM 2) -20 ±8 -2.2 -8 1.25 0.8 -55 to 150 100 166 o V A TA = 25o TA = 75oC 2) Maximum Power Dissipation PD TJ, Tstg RthJA W o Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) C Junction-to-Ambient Thermal Resistance (PCB mounted) 3) C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. 3) Surface Mounted on FR4 Board. 1 JinYu semiconductor www.htsemi.com Date:2011/05 http://www.Datasheet4U.com SI2305 20V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current 0 Gate Body Leakage Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate...