N-channel Power MOSFET
STFI20NK50Z
N-channel 500 V, 0.23 Ω , 17 A Zener-protected SuperMESH™ Power MOSFET in I²PAKFP package
Datasheet — produc...
Description
STFI20NK50Z
N-channel 500 V, 0.23 Ω , 17 A Zener-protected SuperMESH™ Power MOSFET in I²PAKFP package
Datasheet — production data
Features
Type STFI20NK50Z VDSS 500 V RDS(on) max < 0.27 Ω ID 17 A PTOT 40 W
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Fully insulated and low profile package with increased creepage path from pin to heatsink plate Extremely high dv/dt capability 100% avalanche tested Gate charge minimized
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2
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3
I2PAKFP (TO-281)
Applications
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Figure 1.
Internal schematic diagram
D(2)
Switching applications
Description
This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's wellestablished strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Marking 20NK50Z Package I2PAKFP (TO-281) Packaging Tube
Order codes STFI20NK50Z
March 2012
This is information on a product in full production.
Doc ID 019007 Rev 3
1/13
www.st.com 13
http://www.Datasheet4U.com
Contents
STFI20NK50Z
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5
Test circuits
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