K3444

2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3444 Switching Regulator, DC-DC Converter Applications Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 µA (VDS = 200 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 200 200 ±30 25 100 125 488 25 12.5 150 −55 to 150 Unit V V V A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-97 2-9F1B Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.00 Unit °C/W Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into the S2 pin. 4 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.26 mH, IAR = 25 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 Marking 2 3 Part No. (or ...