FTC2412K

SEMICONDUCTOR TECHNICAL DATA FTC2412K General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping FTC2412K-Q FTC2412K-R FTC2412K-S BQ BR G1F 3000 Tape & Reel 3 3000 Tape & Reel 3000 Tape & Reel 1 2 SOT– 23 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector power dissipation Junction temperature Storage temperature Symbol Value 50 60 7.0 150 0.2 150 -55 ~ +150 Unit V V V mAdc W C C 1 BASE 3 COLLECTOR VCEO VCBO VEBO IC PC Tj Tstg 2 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted.) Characteristic Collector–Emitter Breakdown Voltage (IC = 1 mA) Emitter–Base Breakdown Voltage (IE = 50 µA) Collector–Base Breakdown Voltage (IC = 50 µA) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current (VEB = 7 V) Collector-emitter saturation voltage (IC/ IB = 50 mA / 5m A) DC current transfer ratio h FE (VCE = 6 V, IC = 1mA) Transition frequency (VCE = 12 V, IE = – 2mA, f =30MHz ) Output capacitance (VCB = 12 V, IE = 0A, f =1MHz ) Symbol V(BR)CEO V(BR)EBO V(BR)CBO ICBO IEBO VCE(sat) hFE fT Cob Min Typ Max Unit 50 7 60 120 - 180 2.0 0.1 0.1 0.4 560 3.5 V V V μA μA V MHz pF h FE values are classified as follows: * hEF Q 120~270 R 180~390 S 270~560 2010. 01. 18 Revision No : 1 1/3 http://www.Datasheet4U.com FTC2412K 2010. 01. 18 Revision No : 1 2/3 http://www.Da...