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TSC5304ED Dataheets PDF



Part Number TSC5304ED
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description High Voltage NPN Transistor
Datasheet TSC5304ED DatasheetTSC5304ED Datasheet (PDF)

TSC5304ED High Voltage NPN Transistor with Diode TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Features ● ● ● Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation Low Base Drive Requirement Suitable for Half Bridge Light Ballast Application Block Diagram Structure ● ● ● Silicon Triple Diffused Type NPN Silicon Transistor Integrated Anti-parallel Collector-Emitte.

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TSC5304ED High Voltage NPN Transistor with Diode TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Features ● ● ● Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation Low Base Drive Requirement Suitable for Half Bridge Light Ballast Application Block Diagram Structure ● ● ● Silicon Triple Diffused Type NPN Silicon Transistor Integrated Anti-parallel Collector-Emitter Diode Ordering Information Part No. TSC5304EDCP ROG TSC5304EDCH C5G Package TO-252 TO-251 Packing 2.5Kpcs / 13” Reel 75pcs / Tube Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage @ VBE=0V Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current (tp <5ms) Base Current Base Peak Current (tp <5ms) Power Total Dissipation @ Tc=25ºC Maximum Operating Junction Temperature Storage Temperature Range Symbol VCBO VCES VCEO VEBO IC ICM IB IBM PDTOT TJ TSTG Limit 700 700 400 9 4 8 2 4 35 +150 -55 to +150 Unit V V V V A A A A W o o C C 1/6 Version: E11 http://www.Datasheet4U.com TSC5304ED High Voltage NPN Transistor with Diode Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Symbol RӨJC RӨJA Limit 3.57 68 Unit o o C/W C/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC =1mA, IB =0 IC =10mA, IE =0 IE =1mA, IC =0 VCB =700V, IE =0 VCE =400V, IB =0 VEB =7V, IC =0 IC =0.5A, IB =0.1A Collector-Emitter Saturation Voltage IC =1A, IB =0.2A IC =2.5A, IB =0.5A IC =4A, IB =1A Base-Emitter Saturation Voltage IC =1A, IB =0.2A IC =2A, IB =0.5A VCE =5V, IC =10mA DC Current Gain Forward Voltage Drop Turn On Time Storage Time Fall Time Turn On Time Storage Time VCE =5V, IC =1A VCE =5V, IC =2A IF =2A VCC =250V, IC =1A, IB1=IB2=0.2A, tp=25uS Duty Cycle<1% VCC =5V, IC =0.1A, IB1=IB2=0.02A, tp=25uS Vf tON tSTG tf tON tSTG tf Hfe BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VCE(SAT)4 VBE(SAT)1 VBE(SAT)2 700 400 9 ---------10 17 12 -----6.5 -------0.25 0.5 1.2 0.5 ------0.2 3.0 0.2 0.35 -0.3 ---100 250 10 0.7 1 1.5 -1.1 1.2 -37 32 2 0.6 4.5 0.3 0.6 8.5 0.6 V uS uS uS uS uS uS V V V V V uA uA uA Conditions Symbol Min Typ Max Unit Duty Cycle<1% Fall Time Notes: Pulsed duration =380uS, duty cycle ≤2% 2/6 Version: E11 http://www.Datasheet4U.com TSC5304ED High Voltage NPN Transistor with Diode Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. Vce(sat) v.s. Vbe(sat) Figure 4. Power Derating Figure 5. Reverse Bias SOA Figure 6. Safety Operating Area 3/6 Version: E11 http://www.Datasheet4U.com TSC5304ED High Voltage NPN Transistor with Diode TO-251 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 4/6 Version: E11 http://www.Datasheet4U.com TSC5304ED High Voltage NPN Transistor with Diode TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: E11 http://www.Datasheet4U.com TSC5304ED High Voltage NPN Transistor with Diode Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: E11 http://www.Datasheet4U.com .


HE751A2400 TSC5304ED FR7805P


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