Transistors
2SC1518
Silicon NPN epitaxial planar type
For high-frequency bias oscillation of tape recorders For DC-DC c...
Transistors
2SC1518
Silicon
NPN epitaxial planar type
For high-frequency bias oscillation of tape recorders For DC-DC converter
5.9±0.2
Unit: mm 4.9±0.2
8.6±0.2
■ Features
Low collector-emitter saturation voltage VCE(sat)
13.5±0.5 0.7–+00..23
Satisfactory operation performances and high efficiency with a low-
0.7±0.1
voltage power supply
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
25
V
c type Collector-emitter voltage (Base open) VCEO
20
V
n d ge. ed Emitter-base voltage (Collector open) VEBO
5
(3.2)
V
le sta ntinu Collector current
IC
1
A
a e cyc isco Peak collector current
ICP
1.5
A
life d, d Collector power dissipation
PC
1
W
n u duct type Junction temperature
Tj
150
°C
te tin Pro ued Storage temperature
Tstg −55 to +150 °C
0.45+–00..12
0.45+–00..12
(1.27)
(1.27)
1: Emitter
123
2: Collector 3: Base
2.54±0.15
EIAJ: SC-51
TO-92L-A1 Package
in n es follopwlianngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min Typ Max Unit
c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
25
tinu nan Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
20
M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
e/D e, m Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0
D anc typ Collector-emitter cutoff current (Base open) I...
