SUD50P10-43

SUD50P10-43 New Product Vishay Siliconix P-Channel 100-V (D-S) 175 _C MOSFET PRODUCT SUMMARY VDS (V) –100 FEATURES D TrenchFETr Power MOSFET ID (A)a Qg (Typ) 105 nC –38 rDS(on) (W) 0.043 at VGS = –10 V RoHS COMPLIANT TO-252 S G Drain Connected to Tab G D S D P-Channel MOSFET Top View Ordering Information: SUD50P10-43–E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 _C Continuous Drain Current (TJ = 175 _C) TC = 70 _C TA = 25 _C TA = 70 _C Pulsed Drain Current Source Drain Diode Current Continuous Source-Drain Avalanche Current Single-Pulse Avalanche Energy L=0 0.1 1 mH TC = 25 _C Maximum Power Dissipation TC = 70 _C TA = 25 _C TA = 70 _C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25 _C TA = 25 _C IDM IS IAS EAS ID Symbol VDS VGS Limit –100 "20 –38a –31.8a –9.4b, c –7.8b, c –50 –50a –6.9b, c –40 80 136 95 8.3b, c 5.8b, c –50 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) Notes: a. Package limited. b. Surface mounted on 1” x 1” FR4 Board. c. t = 10 sec. d. Maximum under steady state conditions is 40 _C/W. Document Number: 73445 S–60311—Rev. B, 27-Feb-06 www.vishay.com t p 10 sec Steady State Symbol RthJA RthJC Typical 15 0.85 Maximum 18 1.1 Unit _C/W 1 http://www.Datasheet4U.com SUD50P10-43 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE N...