MA6216

MA6116 & MA6216 MARCH 1995 DS3582-3.1 MA6116 & MA6216 RADIATION HARD 2048 x 8 BIT STATIC RAM The MA6116 16k Static RAM is configured as 2048 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The MA6216 is manufactured using 2.5µm technology resulting in faster performance. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when chip select is in the HIGH state. Operation Mode Read Write Write Standby CS L L L H OE WE L H L X H L L X I/O D OUT D IN D IN High Z ISB2 ISB1 Power FEATURES s 3µm CMOS-SOS Technology s Latch-up Free s Fast Access Time 110ns (MA6116) and 85ns (MA6216) Typical s Total Dose 106 Rad(Si) s Transient Upset >1010 Rad(Si)/sec s SEU <10-10 Errors/bitday s Single 5V Supply s Three State Output s Low Standby Current 100µA Typical s -55°C to +125°C Operation s TTL and CMOS Compatible Inputs s Fully Static Operation Figure 1: Truth Table Figure 2: Block Diagram 1 http://www.Datasheet4U.com MA6116 & MA6216 CHARACTERISTICS AND RATINGS Symbol VDD VI TA TS Parameter Supply Voltage Input Voltage Operating Temperature Storage Temperature Min. -0.5 -0.3 -55 -65 Max. 7 VDD+0.3 125 150 Units V V °C °C Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functlonal operation of the device at these condltions, or at any other condition above those indicated in the operations section of ...