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C3279

2SC3279

Description

2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications · High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A) · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA...

Toshiba Semiconductor

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