C6378

2SC3678 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3678 900 800 7 3(Pulse6) 1.5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.3A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 50typ External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 2SC3678 Unit µA µA 19.9±0.3 V V V MHz pF 4.0 a b ø3.2±0.1 20.0min 4.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.15 IB2 (A) –0.5 ton (µs) 1max tstg (µs) 5max tf (µs) 1max 5.45±0.1 B C E 5.45±0.1 Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 3 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) (I C /I B =5) Collector-Emitter Saturation Voltage V C E (sa t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) I C – V BE Temperature Characteristics (Typical) 3 (V CE =4V) 500mA 400mA 300mA 1 –55˚C (Case Tem 25˚C (Cas V B E (sat) p) Collector Current I C (A) 2 200 mA Collector Current I C (A) e Temp) Temp) 2 mp) mp) 25˚C (C ase Te 2 5 Cas eT ˚C e m p) –55...