2SD2209

Power Transistors 2SD2209 Silicon NPN triple diffusion planar type Darlington 7.0±0.3 3.5±0.2 Unit: mm For power amplification and switching 7.2±0.3 0.8±0.2 3.0±0.2 1.0±0.2 M Di ain sc te on na tin nc ue e/ d q I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0 –0. +0.3 s Features 1.1±0.1 0.75±0.1 0.85±0.1 0.4±0.1 2.3±0.2 4.6±0.4 2 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC 100±15 100±15 5 8 4 1 3 Ratings Unit V V V A A 1:Base 2:Collector 3:Emitter I Type Package Unit: mm 0 to 0.15 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature PC Tj Tstg s Electrical Characteristics (TC=25˚C) Parameter Symbol ICBO IEBO hFE1 Collector cutoff current Emitter cutoff current Collector to emitter voltage ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x . ma ht t m ion l . 7.0±0.3 3.5±0.2 2.0±0.2 3.0±0.2 1.0 max. 10.2±0.3 7.2±0.3 1.0 1.0 Collector to base voltage 15 1.3 W 2.5 1.1±0.1 0.75±0.1 0.5 max. 0.9±0.1 150 ˚C ˚C 0 to 0.15 1 2 3 –55 to +150 2.3±0.2 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) Conditions min typ max 100 2 Unit µA VCB = 85V, IE = 0 VEB = 5V, IC = 0 IC = 5mA, IB = 0 mA V VCEO 85 115 Forward current tr...