N-Channel Advanced Power MOSFET
RU4099R
N-Channel Advanced Power MOSFET
Features
Pin Description
· 40V/200A
RDS (ON)=2.8mΩ(Typ.) @ VGS=10V
·Avalanch...
Description
RU4099R
N-Channel Advanced Power MOSFET
Features
Pin Description
· 40V/200A
RDS (ON)=2.8mΩ(Typ.) @ VGS=10V
·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available
Applications
TO-220
·Automotive applications and a wide
variety of other applications
·High Efficiency Synchronous in SMPS ·High Speed Power Switching
Absolute Maximum Ratings
Symbol Parameter
N-Channel MOSFET
Rating Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS VGSS TJ TSTG Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C 40 ±25 175 -55 to 175 200
①
V °C °C A
IS
Mounted on Large Heat Sink
IDP ID PD RθJC 300µs Pulsed Drain Current Tested Continue Drain Current Maximum Power Dissipation Thermal Resistance -Junction to Case
TC=25°C
TC=25°C TC=100°C TC=25°C TC=100°C
800
200
②
① ①
A
140 300 0.5
W
150
°C/W
mJ
Drain-Source Avalanche Ratings
EAS
③
Avalanche Energy ,Single Pulsed
1400
Copyright Ruichips Semiconductor Co., Ltd Rev. C –NOV., 2012
www.ruichips.com
http://www.Datasheet4U.com
RU4099R
Electrical Characteristics
Parameter Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON)
④
(TA=25°C Unless Otherwise Noted) RU4099R Test Condition Min. Typ. Max. Unit
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance
VGS=0V, IDS=250µA VDS= 40V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VD...
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