2N5550

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1999 Apr 23 2004 Oct 28 Philips Semiconductors NPN high-voltage transistors Product specification 2N5550; 2N5551 FEATURES Low current (max. 300 mA) High voltage (max. 160 V). APPLICATIONS Switching and amplification in high voltage applications such as telephony. DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. PINNING PIN 1 2 3 collector base emitter handbook, halfpage1 2 3 DESCRIPTION 2 MAM279 1 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION TYPE NUMBER 2N5550 2N5551 NAME SC-43A PACKAGE DESCRIPTION plastic single-ended leaded (through hole) package; 3 leads VERSION SOT54 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage 2N5550 2N5551 collector-emitter voltage 2N5550 2N5551 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C MIN. MAX. UNIT − 160 V − 180 V − 140 V − 160 V −6V − 300 mA − 600 mA − 100 mA − 630 mW −65 +150 °C − 150 °C −65 +150 °C 2004 Oct 28 2 Philips Semiconductors NPN high-voltage transistors Pr...