BT158-400

DIGITRON SEMICONDUCTORS BT158 SERIES SILICON BIDIRECTIONAL THYRISTORS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Peak repetitive off-state voltage (TJ = -40 to 110°C, ½ sine wave, 50 to 60Hz, gate open) BT158-400 BT158-600 Non-repetitive peak off-state voltage (TJ = -40 to +110°C, t ≤ 10ms, gate open) BT158-400 BT158-600 RMS on-state current (full cycle sine wave 50 to 60Hz) (TC = 90°C) (TC = 100°C) Peak surge current (1 cycle, 60Hz, TC = 90°C, preceded and followed by rated current) (50Hz, preceded and followed by rated current) Rate of rise of on-state current (gate open, non-repetitive) Circuit fusing considerations (TJ = -40 to 110°C , t = 1.0 to 10ms) Peak gate voltage Peak gate current Peak gate power (TC = 90°C, pulse width = 2.0µs) Average gate power (TC = 90°C, t = 10ms) Operating junction temperature range Storage temperature range Symbol Value Unit VDRM 400 600 Volts VDSM 500 700 Volts IT(RMS) 8.0 4.0 80 75 10 30 10 2.0 20 0.5 -40 to +110 -40 to +150 Amps ITSM diT/dt It VGM IGM PGM PG(AV) TJ Tstg 2 Amps A/µs A2s Volts Amps Watts Watts °C °C THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Symbol RӨJC Maximum 2.2 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Peak blocking current (either direction) (Rated VDRM @ TJ = 110°C, gat...