BT162

DIGITRON SEMICONDUCTORS BT162 SERIES SILICON BIDIRECTIONAL THYRISTORS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Peak repetitive off-state voltage (TJ = -40 to 110°C, half sine wave, 50 to 60Hz, gate open) BT162-400 BT162-600 Non-repetitive peak off-state voltage (TJ = -40 to +110°C, t ≤ 10ms, gate open) BT162-400 BT162-600 RMS on-state current (full cycle sine wave 50 to 60Hz) (TC = 80°C) (TC = 95°C) Peak surge current (1 cycle, TC = 80°C,preceded and followed by rated current) 60Hz 50Hz Rate of rise of on-state current (gate open, non-repetitive) Circuit fusing considerations (TJ = -40 to 110°C , t = 1.0 to 10ms) Peak gate voltage Peak gate current Peak gate power (TC = 80°C, pulse width = 2.0µs) Average gate power (TC = 80°C, t = 10ms) Operating junction temperature range Storage temperature range Symbol Value Unit VDRM 400 600 Volts VDSM 500 700 Volts IT(RMS) 12.0 6.0 Amps ITSM 120 110 10 40 10 2.0 20 0.5 -40 to +110 -40 to +150 Amps diT/dt It VGM IGM PGM PG(AV) TJ Tstg 2 A/µs A2s Volts Amps Watts Watts °C °C THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Symbol RӨJC Maximum 2.0 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Peak blocking current (either direction) (Rated VDRM @ TJ = 110°C, gate open) Peak on-state voltage (eithe...