BTC08-100

DIGITRON SEMICONDUCTORS BTC08-(A) SERIES SILICON BIDIRECTIONAL THYRISTORS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Peak repetitive off-state voltage (TJ = 110°C) BTC08-100(A) BTC08-200(A) BTC08-400(A) BTC08-600(A) Peak surge current (1 cycle, 50Hz, TJ = -40 to +110°C) Circuit fusing considerations (TJ = -40 to 110°C , t = 10ms) Peak gate power (pulse width = 10µs) Average gate power (TC = 80°C, t = 10ms) Peak gate current (pulse width = 10µs) Operating junction temperature range Storage temperature range ITM = 12A, IG = 200mA (1) Symbol Value Unit VDRM 100 200 400 600 8.0 60 18 10 0.5 3.5 -40 to +110 -40 to +150 10 Volts RMS on-state current (TC = 72°C) IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg di/dt Amps Amps A2s Watts Watts Amps °C °C A/µs Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. Note 2: Soldering temperatures shall not exceed 200°C for 10 seconds. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Thermal resistance, junction to ambient Symbol RӨJC RӨJA Maximum 2.2 60 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Peak blocking current (either direction) (Rated VDRM @ TJ...