CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
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Vishay Semiconductors
Optocoupler, Phototransistor Output, Very High Isolation Voltage
Top View
CNY64ST
FEATURES
C
A
CNY65ST
C
E
V D E
17187-6
17187-5
• Rated recurring peak voltage (repetitive) VIORM = 1450 Vpeak • Thickness through insulation ≥ 3 mm • Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI ≥ 475 • Moisture sensitivity level MSL4 - Follow defined storage and soldering requirements • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
DESCRIPTION
The CNY6XST, the high isolation voltage SMD version optocouplers consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm.
APPLICATIONS
• Solar and wind power diagnostic, monitoring, and communication equipment • Welding equipment • High voltage motors • Switch-mode power supplies • Line receiver • Computer peripheral interface • Microprocessor system interface • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I to IV at mains voltage ≤ 300 V - for appl. class I to IV at mains voltage ≤ 600 V - for appl. class I to III at mains voltage ≤ 1000 V according to DIN EN 60747-5-2 (VDE 0884)
VDE STANDARDS
These couplers perform safety functions according to the following equipment standards: • DIN EN 60747-5-2 (VDE 0884) Optocoupler for electrical safety requirements • IEC 60065 Safety for mains-operated household apparatus electronic and related
• VDE 0160 Electronic equipment for electrical power installation
AGENCY APPROVALS
• DIN EN 60747-5-2 (VDE 0884) (pending) • UL1577, file no. E76222 system code H, J, and K (pending) • VDE related features: - rated impulse voltage (transient overvoltage), VIOTM = 12 kVpeak - isolation test voltage (partial discharge test voltage), Vpd = 2.8 kVpeak
ORDERING INFORMATION
CNY64ST CNY65ST
C
N
Y
6
# PACKAGE OPTION
X
X
X CTR BIN
S
T
PART NUMBER
10.16 mm
15.24 mm
AGENCY CERTIFIED/PACKAGE UL, VDE SMD-4 HV, 400 mil high isolation distance SMD-4 HV, 600 mil high isolation distance Rev. 1.0, 20-Sep-11 50 to 300 CNY64ST CNY65ST 50 to 150 CNY64AYST CNY65AYST
CTR (%) 5 mA 80 to 240 CNY64ABST CNY65ABST 100 to 300 CNY64AGRST CNY65AGRST
Document Number: 82387 1 For technical questions, contact:
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
www.vishay.com
Vishay Semiconductors
TEST CONDITION SYMBOL VR IF tp ≤ 10 μs IFSM Pdiss Tj VCEO VECO IC tp/T = 0.5, tp ≤ 10 ms ICM Pdiss Tj t = 1 min t=1s VISO VISO Ptot Tamb Tstg 2 mm from case, ≤ 10 s Tsld VALUE 5 75 1.5 120 100 32 7 50 100 130 100 8.2 13.9 250 - 55 to + 85 - 55 to + 100 260 UNIT V mA A mW °C V V mA mA mW °C kVRMS kV mW °C °C °C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER INPUT Reverse voltage Forward current Forward surge current Power dissipation Junction temperature OUTPUT Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature COUPLER AC isolation test voltage CNY64AxxxST DC isolation test voltage CNY65AxxxST Total power dissipation Ambient temperature range Storage temperature range Soldering temperature
Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER INPUT Forward voltage Junction capacitance OUTPUT Collector emitter voltage Emitter collector voltage Collector emitter leakage current COUPLER Collector emitter saturation voltage Cut-off frequency Coupling capacitance IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 Ω f = 1 MHz VCEsat fc Ck 110 0.3 0.3 V kHz pF IC = 1 mA IE = 100 μA VCE = 20 V, IF = 0 mA VCEO VECO ICEO 32 7 200 V V nA IF = 50 mA VR = 0, f = 1 MHz VF Cj 1.32 50 1.6 V pF TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Rev. 1.0, 20-Se.