4N25, 4N26, 4N27, 4N28
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
A C NC 1 2 3 6 B 5 C 4 E
• Isolation test voltage 5000 VRMS • Interfaces with common logic families • Input-output coupling capacitance < 0.5 pF • Industry standard dual-in-line 6 pin package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
21842
i179004-5
APPLICATIONS
• AC mains detection • Reed relay driving
DESCRIPTION
The 4N25 family is an industry standard single channel phototransistor coupler. This family includes the 4N25, 4N26, 4N27, 4N28. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor.
• Switch mode power supply feedback • Telephone ring detection • Logic ground isolation • Logic coupling with high frequency noise rejection
AGENCY APPROVALS
• UL1577, file no. E52744 • BSI: EN 60065:2002, EN 60950:2000 • FIMKO: EN 60950, EN 60065, EN 60335
ORDER INFORMATION
PART 4N25 4N26 4N27 4N28 REMARKS CTR > 20 %, DIP-6 CTR > 20 %, DIP-6 CTR > 10 %, DIP-6 CTR > 10 %, DIP-6
ABSOLUTE MAXIMUM RATINGS
PARAMETER INPUT Reverse voltage Forward current Surge current Power dissipation OUTPUT Collector emitter breakdown voltage Emitter base breakdown voltage Collector current Power dissipation
(1)
TEST CONDITION
SYMBOL VR IF
VALUE 5 60 3 100 70 7 50 100 150
UNIT V mA A mW V V mA mA mW
t ≤ 10 μs
IFSM Pdiss VCEO VEBO IC
t ≤ 1 ms
IC Pdiss
www.vishay.com 132
For technical questions, contact:
[email protected]
Document Number: 83725 Rev. 1.8, 07-Jan-10
http://www.Datasheet4U.com
4N25, 4N26, 4N27, 4N28
Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER COUPLER Isolation test voltage Creepage distance Clearance distance Isolation thickness between emitter and detector Comparative tracking index Isolation resistance Storage temperature Operating temperature Junction temperature Soldering temperature (2) max.10 s dip soldering: distance to seating plane ≥ 1.5 mm DIN IEC 112/VDE 0303, part 1 VIO = 500 V, Tamb = 25 °C VIO = 500 V, Tamb = 100 °C RIO RIO Tstg Tamb Tj Tsld VISO 5000 ≥7 ≥7 ≥ 0.4 175 1012 1011 - 55 to + 125 - 55 to + 100 125 260 Ω Ω °C °C °C °C VRMS mm mm mm
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through hole devices (DIP).
ELECTRICAL CHARACTERISTICS (1)
PARAMETER INPUT Forward voltage (2) Reverse current (2) Capacitance OUTPUT Collector bas.