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4N28 Dataheets PDF



Part Number 4N28
Manufacturers Vishay
Logo Vishay
Description Optocoupler
Datasheet 4N28 Datasheet4N28 Datasheet (PDF)

4N25, 4N26, 4N27, 4N28 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES A C NC 1 2 3 6 B 5 C 4 E • Isolation test voltage 5000 VRMS • Interfaces with common logic families • Input-output coupling capacitance < 0.5 pF • Industry standard dual-in-line 6 pin package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21842 i179004-5 APPLICATIONS • AC mains detection • Reed relay driving DESCRIPTION The 4N25 family is an industry.

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4N25, 4N26, 4N27, 4N28 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES A C NC 1 2 3 6 B 5 C 4 E • Isolation test voltage 5000 VRMS • Interfaces with common logic families • Input-output coupling capacitance < 0.5 pF • Industry standard dual-in-line 6 pin package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21842 i179004-5 APPLICATIONS • AC mains detection • Reed relay driving DESCRIPTION The 4N25 family is an industry standard single channel phototransistor coupler. This family includes the 4N25, 4N26, 4N27, 4N28. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. • Switch mode power supply feedback • Telephone ring detection • Logic ground isolation • Logic coupling with high frequency noise rejection AGENCY APPROVALS • UL1577, file no. E52744 • BSI: EN 60065:2002, EN 60950:2000 • FIMKO: EN 60950, EN 60065, EN 60335 ORDER INFORMATION PART 4N25 4N26 4N27 4N28 REMARKS CTR > 20 %, DIP-6 CTR > 20 %, DIP-6 CTR > 10 %, DIP-6 CTR > 10 %, DIP-6 ABSOLUTE MAXIMUM RATINGS PARAMETER INPUT Reverse voltage Forward current Surge current Power dissipation OUTPUT Collector emitter breakdown voltage Emitter base breakdown voltage Collector current Power dissipation (1) TEST CONDITION SYMBOL VR IF VALUE 5 60 3 100 70 7 50 100 150 UNIT V mA A mW V V mA mA mW t ≤ 10 μs IFSM Pdiss VCEO VEBO IC t ≤ 1 ms IC Pdiss www.vishay.com 132 For technical questions, contact: [email protected] Document Number: 83725 Rev. 1.8, 07-Jan-10 http://www.Datasheet4U.com 4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection ABSOLUTE MAXIMUM RATINGS PARAMETER COUPLER Isolation test voltage Creepage distance Clearance distance Isolation thickness between emitter and detector Comparative tracking index Isolation resistance Storage temperature Operating temperature Junction temperature Soldering temperature (2) max.10 s dip soldering: distance to seating plane ≥ 1.5 mm DIN IEC 112/VDE 0303, part 1 VIO = 500 V, Tamb = 25 °C VIO = 500 V, Tamb = 100 °C RIO RIO Tstg Tamb Tj Tsld VISO 5000 ≥7 ≥7 ≥ 0.4 175 1012 1011 - 55 to + 125 - 55 to + 100 125 260 Ω Ω °C °C °C °C VRMS mm mm mm (1) TEST CONDITION SYMBOL VALUE UNIT Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (1) PARAMETER INPUT Forward voltage (2) Reverse current (2) Capacitance OUTPUT Collector bas.


4N27 4N28 AD8451


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