Document
PTVSxU1UPA series
N3 HU
300 W Transient Voltage Suppressor
Rev. 1 — 6 March 2014 Product data sheet
1. Product profile
1.1 General description
300 W unidirectional Transient Voltage Suppressor (TVS) in a DFN2020-3 (SOT1061) leadless medium power Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection.
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1.2 Features and benefits
Rated peak pulse power: PPPM = 300 W Reverse current: IRM = 1 nA Very low package height: 0.65 mm Reverse standoff voltage range: VRWM = 7.5 V to 26 V AEC-Q101 qualified
1.3 Applications
Power supply protection Industrial application Power management
1.4 Quick reference data
Table 1. Symbol PPPM VRWM
[1] [2]
Quick reference data Parameter rated peak pulse power reverse standoff voltage Conditions
[1][2]
Min 7.5
Typ -
Max 300 26
Unit W V
In accordance with IEC 61643-321 (10/1000 s current waveform). Measured from pin 1 and 2 to pin 3.
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NXP Semiconductors
PTVSxU1UPA series
300 W Transient Voltage Suppressor
2. Pinning information
Table 2. Pin 1 and 2 3 Pinning Description anode cathode
3 3 1, 2
006aab838
Simplified outline
Graphic symbol
1
2
Transparent top view
3. Ordering information
Table 3. Ordering information Package Name PTVSxU1UPA series Description Version SOT1061 DFN2020-3 plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 2 0.65 mm Type number[1]
[1]
The series consists of 6 types with reverse standoff voltages from 7.5 V to 26 V.
4. Marking
Table 4. Marking codes Marking code CX CY CZ D1 D2 D3 Type number PTVS7V5U1UPA PTVS10VU1UPA PTVS12VU1UPA PTVS15VU1UPA PTVS18VU1UPA PTVS26VU1UPA
PTVSXU1UPA_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 6 March 2014
2 of 12
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NXP Semiconductors
PTVSxU1UPA series
300 W Transient Voltage Suppressor
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPPM IPPM Tj Tamb Tstg
[1] [2] [3]
Parameter rated peak pulse power rated peak pulse current junction temperature ambient temperature storage temperature
Conditions
[1][3] [2][3]
Min 55 65
Max 300 3000 150 +150 +150
Unit W W C C C
see Table 8
In accordance with IEC 61643-321 (10/1000 s current waveform). In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20 s current waveform). Measured from pin 1 and 2 to pin 3.
Table 6. ESD maximum ratings Tamb = 25 C unless otherwise specified. Symbol VESD Parameter electrostatic discharge voltage Conditions IEC 61000-4-2 (contact discharge) IEC 61000-4-2 (air discharge)
[1] [2]
[1][2]
Min -
Max 30 30
Unit kV kV
[1][2]
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses. Measured from pin 1 and 2 to pin 3.
PTVSXU1UPA_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 6 March 2014
3 of 12
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t
t
p
:
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NXP Semiconductors
PTVSxU1UPA series
300 W Transient Voltage Suppressor
150 IPP (%) 100 100 % IPP; 10 μs
006aab319
120 IPP (%) 80 e-t 100 % IPP; 8 µs
001aaa630
50 % IPP; 20 µs 50 % IPP; 1000 μs 50 40
0 0 1.0 2.0 3.0 tp (ms) 4.0
0 0 10 20 30 tp (ms) 40
Fig 1.
10/1000 s pulse waveform according to IEC 61643-321
Fig 2.
8/20 s pulse waveform according to IEC 61000-4-5 and IEC 61643-321
001aaa631
IPP 100 % 90 %
10 % tr = 0.6 ns to 1 ns 30 ns 60 ns t
Fig 3.
ESD pulse waveform according to IEC 61000-4-2
PTVSXU1UPA_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 6 March 2014
4 of 12
http://www.Datasheet4U.com
NXP Semiconductors
PTVSxU1UPA series
300 W Transient Voltage Suppressor
6. Thermal characteristics
Table 7. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1] [2] [3]
Min -
Typ -
Max 240 120 65 10
Unit K/W K/W K/W K/W
Rth(j-sp)
[1] [2] [3] [4]
thermal resistance from junction to solder point
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab.
7. Characteristics
Table 8. Characteristics per type; PTVS7V5U1UPA to PTVS26VU1UPA Tj = 25 C unless otherwise specified. Type number Reverse standoff voltage VRWM (V) Max PTVS7V5U1UPA 7.5 PTVS10VU1UPA 10 PTVS12VU1UPA 12 PTVS15VU1UPA 15 PTVS18VU1UPA 18 PTVS26VU1UPA 26
[1] [2] [3]
Breakdown voltage VBR (V) IR = 1 mA
Reverse Rated leakage current peak pulse IRM (nA) at VRWM current IPPM (A)
[1][3]
Rated peak pulse current IPPM (A)
[2][3]
Clamping voltage VCL (V); at IPPM (A)[1][3] Max 19.7.