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PTVS15VU1UPA Dataheets PDF



Part Number PTVS15VU1UPA
Manufacturers NXP
Logo NXP
Description 300 W Transient Voltage Suppressor
Datasheet PTVS15VU1UPA DatasheetPTVS15VU1UPA Datasheet (PDF)

PTVSxU1UPA series N3 HU 300 W Transient Voltage Suppressor Rev. 1 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description 300 W unidirectional Transient Voltage Suppressor (TVS) in a DFN2020-3 (SOT1061) leadless medium power Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. SO 1.2 Features and benefits  Rated peak pulse power: PPPM = 300 W  Reverse current: IRM = 1 nA  Very low package height: 0.65 mm  Reverse standoff volta.

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PTVSxU1UPA series N3 HU 300 W Transient Voltage Suppressor Rev. 1 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description 300 W unidirectional Transient Voltage Suppressor (TVS) in a DFN2020-3 (SOT1061) leadless medium power Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. SO 1.2 Features and benefits  Rated peak pulse power: PPPM = 300 W  Reverse current: IRM = 1 nA  Very low package height: 0.65 mm  Reverse standoff voltage range: VRWM = 7.5 V to 26 V  AEC-Q101 qualified 1.3 Applications  Power supply protection  Industrial application  Power management 1.4 Quick reference data Table 1. Symbol PPPM VRWM [1] [2] Quick reference data Parameter rated peak pulse power reverse standoff voltage Conditions [1][2] Min 7.5 Typ - Max 300 26 Unit W V In accordance with IEC 61643-321 (10/1000 s current waveform). Measured from pin 1 and 2 to pin 3. http://www.Datasheet4U.com NXP Semiconductors PTVSxU1UPA series 300 W Transient Voltage Suppressor 2. Pinning information Table 2. Pin 1 and 2 3 Pinning Description anode cathode 3 3 1, 2 006aab838 Simplified outline Graphic symbol 1 2 Transparent top view 3. Ordering information Table 3. Ordering information Package Name PTVSxU1UPA series Description Version SOT1061 DFN2020-3 plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2  2  0.65 mm Type number[1] [1] The series consists of 6 types with reverse standoff voltages from 7.5 V to 26 V. 4. Marking Table 4. Marking codes Marking code CX CY CZ D1 D2 D3 Type number PTVS7V5U1UPA PTVS10VU1UPA PTVS12VU1UPA PTVS15VU1UPA PTVS18VU1UPA PTVS26VU1UPA PTVSXU1UPA_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved. Product data sheet Rev. 1 — 6 March 2014 2 of 12 http://www.Datasheet4U.com NXP Semiconductors PTVSxU1UPA series 300 W Transient Voltage Suppressor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPPM IPPM Tj Tamb Tstg [1] [2] [3] Parameter rated peak pulse power rated peak pulse current junction temperature ambient temperature storage temperature Conditions [1][3] [2][3] Min 55 65 Max 300 3000 150 +150 +150 Unit W W C C C see Table 8 In accordance with IEC 61643-321 (10/1000 s current waveform). In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20 s current waveform). Measured from pin 1 and 2 to pin 3. Table 6. ESD maximum ratings Tamb = 25 C unless otherwise specified. Symbol VESD Parameter electrostatic discharge voltage Conditions IEC 61000-4-2 (contact discharge) IEC 61000-4-2 (air discharge) [1] [2] [1][2] Min - Max 30 30 Unit kV kV [1][2] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses. Measured from pin 1 and 2 to pin 3. PTVSXU1UPA_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved. Product data sheet Rev. 1 — 6 March 2014 3 of 12 h t t p : / NXP Semiconductors PTVSxU1UPA series 300 W Transient Voltage Suppressor 150 IPP (%) 100 100 % IPP; 10 μs 006aab319 120 IPP (%) 80 e-t 100 % IPP; 8 µs 001aaa630 50 % IPP; 20 µs 50 % IPP; 1000 μs 50 40 0 0 1.0 2.0 3.0 tp (ms) 4.0 0 0 10 20 30 tp (ms) 40 Fig 1. 10/1000 s pulse waveform according to IEC 61643-321 Fig 2. 8/20 s pulse waveform according to IEC 61000-4-5 and IEC 61643-321 001aaa631 IPP 100 % 90 % 10 % tr = 0.6 ns to 1 ns 30 ns 60 ns t Fig 3. ESD pulse waveform according to IEC 61000-4-2 PTVSXU1UPA_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved. Product data sheet Rev. 1 — 6 March 2014 4 of 12 http://www.Datasheet4U.com NXP Semiconductors PTVSxU1UPA series 300 W Transient Voltage Suppressor 6. Thermal characteristics Table 7. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [1] [2] [3] Min - Typ - Max 240 120 65 10 Unit K/W K/W K/W K/W Rth(j-sp) [1] [2] [3] [4] thermal resistance from junction to solder point [4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab. 7. Characteristics Table 8. Characteristics per type; PTVS7V5U1UPA to PTVS26VU1UPA Tj = 25 C unless otherwise specified. Type number Reverse standoff voltage VRWM (V) Max PTVS7V5U1UPA 7.5 PTVS10VU1UPA 10 PTVS12VU1UPA 12 PTVS15VU1UPA 15 PTVS18VU1UPA 18 PTVS26VU1UPA 26 [1] [2] [3] Breakdown voltage VBR (V) IR = 1 mA Reverse Rated leakage current peak pulse IRM (nA) at VRWM current IPPM (A) [1][3] Rated peak pulse current IPPM (A) [2][3] Clamping voltage VCL (V); at IPPM (A)[1][3] Max 19.7.


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