Document
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC3058
DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For switching regulator and DC/DC converter applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 600 400 7 30 200 200 -65~200 UNIT V V V A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT /W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ; IB=0 IC=1mA; IE=0 IE=1mA; IC=0 IC=20A; IB=4A IC=20A; IB=4A VCB=500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=20A ; VCE=5V IC=4A ; VCE=10V IE=0 ; VCB=10V;f=1MHz 15 10 MIN 400 600 7
2SC3058
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB
TYP.
MAX
UNIT V V V
1.0 1.5 10 10 50 40 30 420
V V µA µA
MHz pF
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3058
Fig.2 Outline dimensions
3
.