DSEI30-10AR

Fast Recovery Epitaxial Diode (FRED) DSEI 30 IFAVM = 30 A VRRM = 1000 V trr = 35 ns VRSM V 1000 1000 VRRM V 1000 1000 Type A C TO-247 AD Version A ISOPLUS 247TM Version AR DSEI 30-10A DSEI 30-10AR C A C (TAB) C A Isolated back surface * A = Anode, C = Cathode Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 70 30 375 200 210 185 195 200 180 170 160 -40...+150 150 -40...+150 TC = 25°C Mounting torque mounting force with clip 50/60 Hz, RMS, t = 1 minute, leads-to-tab 138 0.8...1.2 20...120 2500 6 A A A A A A A A2s A2s A2s A2s °C °C °C W Nm N V~ g * Patent pending Features q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine q q q International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behavior Epoxy meets UL 94V-0 Version AR isolated and UL registered E153432 TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md * FC VISOL ** Weight * Verson A only; ** Version AR only Applications q q q q q q q q Symbol Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 36 A; Characteristic Values typ. max. 750 250 7 2 2.4 1.5 12.5 0.9 0.25 35 mA mA mA V V V mW K/W K/W K/W ns A Antipa...