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IRF7317PBF Dataheets PDF



Part Number IRF7317PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7317PBF DatasheetIRF7317PBF Datasheet (PDF)

PD - 95296 IRF7317PbF Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Fully Avalanche Rated l Lead-Free Description l l HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch VDSS 20V P-Ch -20V 6 5 P-CHANNEL MOSFET Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed an.

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PD - 95296 IRF7317PbF Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Fully Avalanche Rated l Lead-Free Description l l HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch VDSS 20V P-Ch -20V 6 5 P-CHANNEL MOSFET Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Top View RDS(on) 0.029Ω 0.058Ω SO-8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current… TA = 25°C TA = 70°C V DS V GS N-Channel 20 6.6 5.3 26 2.5 2.0 1.3 100 4.1 0.20 5.0 -5.0 -55 to + 150 °C 150 -2.9 Maximum P-Channel -20 ± 12 -5.3 -4.3 -21 -2.5 Units Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation … TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range IDM IS A W mJ A mJ V/ ns EAS IAR EAR dv/dt TJ, TSTG Thermal Resistance Ratings Maximum Junction-to-Ambient … Parameter Symbol RθJA Limit 62.5 Units °C/W 5/25/04 Free Datasheet http://www.Datasheet4U.com IRF7317PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 20 -20 — — — — — — 0.7 -0.7 — — — — — — –– — — — — — — — — — — — — — — — — — — — — Typ. Max. — — — — 0.027 — 0.031 — 0.023 0.029 0.030 0.046 0.049 0.058 0.082 0.098 — — — — 20 — 5.9 — — 1.0 — -1.0 — 5.0 — -25 — ±100 18 27 19 29 2.2 3.3 4.0 6.1 6.2 9.3 7.7 12 8.1 12 15 22 17 25 40 60 38 57 42 63 31 47 49 73 900 — 780 — 430 — 470 — 200 — 240 — Units V V/°C Ω V S µA nA Conditions VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA VGS = 4.5V, ID = 6.0A „ VGS = 2.7V, ID = 5.2A „ VGS = -4.5V, ID = -2.9A „ VGS = -2.7V, ID = -1.5A „ VDS = VGS, I D = 250µA VDS = VGS, I D = -250µA VDS = 10V, I D = 6.0A „ VDS = -10V, I D = -1.5A „ VDS = 16V, V GS = 0V VDS = -16V, VGS = 0V VDS = 16V, VGS = 0V, T J = 55°C VDS = -16V, V GS = 0V, TJ = 55°C VGS = ±12V N-Channel I D = 6.0A, V DS = 10V, VGS = 4.5V P-Channel I D = -2.9A, VDS = -16V, VGS = -4.5V N-Channel VDD = 10V, ID = 1.0A, RG = 6.0Ω, RD = 10Ω P-Channel VDD = -10V, ID = -2.9A, RG = 6.0Ω, RD = 3.4Ω N-Channel V GS = 0V, V DS = 15V, ƒ = 1.0MHz P-Channel V GS = 0V, V DS = -15V, ƒ = 1.0MHz ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) V GS(th) gfs I DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC „ ns „ pF Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions — — 2.5 — — -2.5 A — — 26 — — -21 — 0.72 1.0 TJ = 25°C, IS = 1.7A, VGS = 0V ƒ V — -0.78 -1.0 TJ = 25°C, IS = -2.9A, VGS = 0V ƒ — 52 77 N-Channel ns — 47 71 TJ = 25°C, I F =1.7A, di/dt = 100A/µs — 58 86 P-Channel „ nC TJ = 25°C, I F = -2.9A, di/dt = 100A/µs — 49 73  Repetitive rating; pulse width limited by Notes: „ Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 22 ) … Surface mounted on FR-4 board, t ≤ 10sec. ‚ N-Channel ISD ≤ 4.1A, di/dt ≤ 92A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V (BR)DSS, TJ ≤ 150°C ƒ N-Channel Starting TJ = 25°C, L = 12mH RG = 25Ω, IAS = 4.1A. (See Figure 12) P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.9A. Free Datasheet http://www.Datasheet4U.com N-Channel 100 IRF7317PbF VGS 7.50V 4.50V 4.00V 3.50V 3.00V 2.70V 2.00V BOTTOM 1.50V TOP I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 7.50V 4.50V .


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