Document
PD - 95296
IRF7317PbF
Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Fully Avalanche Rated l Lead-Free Description
l l
HEXFET® Power MOSFET
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 3 4 7
D1 D1 D2 D2
N-Ch VDSS 20V
P-Ch -20V
6 5
P-CHANNEL MOSFET
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Top View
RDS(on) 0.029Ω 0.058Ω
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
TA = 25°C TA = 70°C V DS V GS N-Channel 20 6.6 5.3 26 2.5 2.0 1.3 100 4.1 0.20 5.0 -5.0 -55 to + 150 °C 150 -2.9
Maximum P-Channel
-20 ± 12 -5.3 -4.3 -21 -2.5
Units
Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation
TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range
IDM IS
A
W mJ A mJ V/ ns
EAS IAR EAR dv/dt TJ, TSTG
Thermal Resistance Ratings
Maximum Junction-to-Ambient
Parameter
Symbol
RθJA
Limit
62.5
Units
°C/W 5/25/04
Free Datasheet http://www.Datasheet4U.com
IRF7317PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 20 -20 0.7 -0.7 Typ. Max. 0.027 0.031 0.023 0.029 0.030 0.046 0.049 0.058 0.082 0.098 20 5.9 1.0 -1.0 5.0 -25 ±100 18 27 19 29 2.2 3.3 4.0 6.1 6.2 9.3 7.7 12 8.1 12 15 22 17 25 40 60 38 57 42 63 31 47 49 73 900 780 430 470 200 240 Units V V/°C Ω V S µA nA Conditions VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA VGS = 4.5V, ID = 6.0A VGS = 2.7V, ID = 5.2A VGS = -4.5V, ID = -2.9A VGS = -2.7V, ID = -1.5A VDS = VGS, I D = 250µA VDS = VGS, I D = -250µA VDS = 10V, I D = 6.0A VDS = -10V, I D = -1.5A VDS = 16V, V GS = 0V VDS = -16V, VGS = 0V VDS = 16V, VGS = 0V, T J = 55°C VDS = -16V, V GS = 0V, TJ = 55°C VGS = ±12V N-Channel I D = 6.0A, V DS = 10V, VGS = 4.5V P-Channel I D = -2.9A, VDS = -16V, VGS = -4.5V N-Channel VDD = 10V, ID = 1.0A, RG = 6.0Ω, RD = 10Ω P-Channel VDD = -10V, ID = -2.9A, RG = 6.0Ω, RD = 3.4Ω N-Channel V GS = 0V, V DS = 15V, = 1.0MHz P-Channel V GS = 0V, V DS = -15V, = 1.0MHz
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) V GS(th) gfs I DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
nC
ns
pF
Source-Drain Ratings and Characteristics
Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions 2.5 -2.5 A 26 -21 0.72 1.0 TJ = 25°C, IS = 1.7A, VGS = 0V V -0.78 -1.0 TJ = 25°C, IS = -2.9A, VGS = 0V 52 77 N-Channel ns 47 71 TJ = 25°C, I F =1.7A, di/dt = 100A/µs 58 86 P-Channel nC TJ = 25°C, I F = -2.9A, di/dt = 100A/µs 49 73
Repetitive rating; pulse width limited by
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 22 )
Surface mounted on FR-4 board, t ≤ 10sec. N-Channel ISD ≤ 4.1A, di/dt ≤ 92A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V (BR)DSS, TJ ≤ 150°C N-Channel Starting TJ = 25°C, L = 12mH RG = 25Ω, IAS = 4.1A. (See Figure 12) P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.9A.
Free Datasheet http://www.Datasheet4U.com
N-Channel
100
IRF7317PbF
VGS 7.50V 4.50V 4.00V 3.50V 3.00V 2.70V 2.00V BOTTOM 1.50V TOP
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 7.50V 4.50V .