Document
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,60V IPD025N06N
DataSheet
Rev.2.5 Final
PowerManagement&Multimarket
1Description
Features
•Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalresistance •N-channel,normallevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 60
V
RDS(on),max
2.5
mΩ
ID 90 A
QOSS
81
nC
QG(0V..10V)
71
nC
OptiMOSTMPower-Transistor,60V IPD025N06N
D-PAK
12 3
tab
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPD025N06N
Package PG-TO252-3
Marking 025N06N
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
2
Rev.2.5,2014-07-23
OptiMOSTMPower-Transistor,60V
IPD025N06N
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . ..