IRF1324SPBF

PD - 97353A IRF1324SPbF IRF1324LPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D HEXFET® Power MOSFET G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 24V 1.3mΩ 1.65mΩ 340A 195A c G D S S D G TO-262 IRF1324LPbF D2Pak IRF1324SPbF G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Max. 340 240 195 1420 300 2.0 ± 20 0.46 -55 to + 175 300 Units A d f W W/°C V V/ns Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy °C Avalanche Characteristics EAS (Thermally limited) IAR EAR Ãd e Thermal Resistance Symbol RθJC RθJA g jk 270 See Fig. 14, 15, 22a, 22b mJ A mJ Junction-to-Case Junction-to-Ambient (PCB Mounted, steady-state) k Parameter ...