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CY62137VN Dataheets PDF



Part Number CY62137VN
Manufacturers Cypress Semiconductor
Logo Cypress Semiconductor
Description 2-Mbit (128K x 16) Static RAM
Datasheet CY62137VN DatasheetCY62137VN Datasheet (PDF)

CY62137VN MoBL® 2-Mbit (128K x 16) Static RAM Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C — Automotive-E: –40°C to 125°C • High Speed: 55 ns • Wide voltage range: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected • CMOS for optimum speed/power • Available in Pb-free 44-pin TSOP Type II package portable applications such as cellular tele.

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CY62137VN MoBL® 2-Mbit (128K x 16) Static RAM Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C — Automotive-E: –40°C to 125°C • High Speed: 55 ns • Wide voltage range: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected • CMOS for optimum speed/power • Available in Pb-free 44-pin TSOP Type II package portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH) or when CE is LOW and both BLE and BHE are HIGH. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16).Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes. Functional Description[1] The CY62137VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in Logic Block Diagram DATA IN DRIVERS A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 10 ROW DECODER 128K x 16 RAM Array SENSE AMPS I/O0–I/O7 I/O8–I/O15 COLUMN DECODER BHE WE CE OE BLE CE BHE BLE A11 Power-down Circuit Note: 1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com. A12 A13 A14 A15 A16 Cypress Semiconductor Corporation Document #: 001-06497 Rev. *A • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised August 3, 2006 [+] Feedback Free Datasheet http://www.Datasheet4U.com CY62137VN MoBL® Product Portfolio Power Dissipation VCC Range (V) Product CY62137VNLL Industrial CY62137VNLL CY62137VNLL Automotive-A CY62137VNLL Automotive-E Min. 2.7 Typ.[3] 3.0 Max. 3.6 55 70 70 70 Speed (ns) Operating, ICC (mA) Typ.[3] 7 7 7 7 Max. 20 15 15 15 Standby, ISB2 (µA) Typ.[3] 1 1 1 1 Max. 15 15 15 20 Pin Configurations TSOP II (Forward) Top View A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE BHE BLE I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC Pin Definitions Pin Number Type A0–A16. Address Inputs I/O0–I/O15. Data lines. Used as input or output lines depending on operation NC. This pin is not connected to the die Description 1–5, 18–22, 24–27, 42–45 Input 7–10, 13–16, 29–32, 35–38 Input/Output 23 17 6 40, 39 41 No Connect Input/Control WE. When selected LOW, a WRITE is conducted. When selected HIGH, a READ is conducted Input/Control CE. When LOW, selects the chip. When HIGH, deselects the chip Input/Control Byte Write Select Inputs, active LOW. BHE controls I/O15–I/O8, BLE controls I/O7–I/O0. Input/Control OE. Output Enable. Controls the direction of the I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins Ground VSS. Ground for the device 12, 34 11, 33 Power Supply VCC. Power supply for the device Notes: 2. NC pins are not connected on the die. 3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(TYP)., TA = 25°C. Document #: 001-06497 Rev. *A Page 2 of 11 [+] Feedback Free Datasheet http://www.Datasheet4U.com CY62137VN MoBL® Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage to Ground Potential ............... –0.5V to +4.6V DC Voltage Applied to Outputs in High-Z State[4] ....................................–0.5V to VCC + 0.5V DC Input Voltage[4] ................................


PL586-18 CY62137VN CTX01-18738-R


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