IN5711

SAM YANG SAMYANG ELECTRONICS IN5711 VOLTAGE RANGE: 60 CURRENT: 400 mW SMALL SIGNAL SCHOTTKY DIODES FEATURES For general purpos e applications Metal s ilicon s chottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fas t s witching m ake it ideal for protection of MOS devices ,s teering,bias ing and coupling diodes for fas t s witching and low logic level applications DO - 35(GLASS) MECHANICAL DATA Cas e:JEDEC DO--35,glas s cas e Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram ABSOLUTE RATINGS(LIMITING VALUES) Symbols Peak reverse voltage Pow er dissipation (Inf inite Heat Sink) Maximum single cycle surge 10 Junction tenperature Storage temperature range s square w ave Value 70.0 400 1) UNITS V zm W A V RRM P tot IFSM TJ TSTG 2.0 125 c-55 ---+ 150 1)V alid provided that leads at a distance of 4mm f rom case are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherw ise specified) Symbols Reverse breakdow n voltage Leakage current Forw ard voltage drop @ V R=50V @ IF=1mA IF=15mA Junction capacitance @ V R=0V ,f=1MHz Reverse recovery time @ IF=IR=5mA ,recover to 0.1 IR Termal resistance junction to ambient air @ IR=10 A Min. 70.0 Typ. Max. UNITS V VR IR VF VF CJ t rr R JA 200.0 0.41 1.0 2 1 0.3 anA V V pF ns /m W www.diode.co.kr 1. Free Datasheet http://www.Datasheet4U.com RATINGS AND CHARACTERISTIC CURVES FIG.1 -- TYPICAL VARIATION OF FWD. ...