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IRFP22N50APBF Dataheets PDF



Part Number IRFP22N50APBF
Manufacturers IRF
Logo IRF
Description Power MOSFET
Datasheet IRFP22N50APBF DatasheetIRFP22N50APBF Datasheet (PDF)

PD - 95004 SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current IRFP22N50APbF HEXFET® Power MOSFET VDSS 500V RDS(on) max 0.23Ω ID 22A TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°.

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PD - 95004 SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current IRFP22N50APbF HEXFET® Power MOSFET VDSS 500V RDS(on) max 0.23Ω ID 22A TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 22 14 88 277 2.2 ± 30 4.8 -55 to + 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies l l Full Bridge Converters Power Factor Correction Boost Notes  www.irf.com through … are on page 8 1 2/11/04 Free Datasheet http://www.Datasheet4U.com IRFP22N50APbF Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Min. 12 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 26 94 47 47 3450 513 27 4935 137 264 Min. Typ. Max. Units Conditions 500 ––– ––– V VGS = 0V, ID = 250µA ––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA† ––– ––– 0.23 Ω VGS = 10V, ID = 13A „ 2.0 ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– 25 VDS = 500V, VGS = 0V µA ––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V Max. Units Conditions ––– S VDS = 50V, ID = 13A 120 ID = 22A 32 nC VDS = 400V 52 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 250V ––– ID = 22A ns ––– R G = 4.3Ω ––– R D = 11Ω,See Fig. 10 „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 400V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 1180 22 28 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Typ. ––– 0.24 ––– Max. 0.45 ––– 40 Units °C/W Diode Characteristics Min. Typ. Max. Units IS ISM VSD trr Qrr ton 2 Conditions D MOSFET symbol 22 ––– ––– showing the A G integral reverse 88 ––– ––– S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 22A, VGS = 0V „ ––– 570 850 ns TJ = 25°C, IF = 22A ––– 6.1 9.2 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com Free Datasheet http://www.Datasheet4U.com IRFP22N50APbF 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1 10 4.5V 0.1 0.01 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 4.5V 20µs PULSE WIDTH TJ = 150 ° C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 22A I D , Drain-to-Source Current (A) TJ = 150 ° C 10 2.5 2.0 TJ = 25 ° C 1 1.5 1.0 0.5 0.1 4.0 V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 Free Datasheet http://www.Datasheet4U.com IRFP22N50APbF 100000 VGS , Gate-to-Source Voltage (V) 10000 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 ID = 22A VDS = 400V VDS = 250V VDS = 100V 16 C, Capacitance (pF) Ciss 1000 12 Coss 100 8 Crss 10 4 1 1 10 100 1000 A 0 FOR TEST CIRCUIT SEE FIGURE 13 0 20 40 60 80 100 120 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typi.


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