Document
PD - 95004
SMPS MOSFET
Applications l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current
IRFP22N50APbF
HEXFET® Power MOSFET
VDSS
500V
RDS(on) max
0.23Ω
ID
22A
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
22 14 88 277 2.2 ± 30 4.8 -55 to + 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A W W/°C V V/ns °C
Typical SMPS Topologies
l l
Full Bridge Converters Power Factor Correction Boost
Notes
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2/11/04
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IRFP22N50APbF
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Min. 12 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 26 94 47 47 3450 513 27 4935 137 264
Min. Typ. Max. Units Conditions 500 ––– ––– V VGS = 0V, ID = 250µA ––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.23 Ω VGS = 10V, ID = 13A 2.0 ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– 25 VDS = 500V, VGS = 0V µA ––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V Max. Units Conditions ––– S VDS = 50V, ID = 13A 120 ID = 22A 32 nC VDS = 400V 52 VGS = 10V, See Fig. 6 and 13 ––– VDD = 250V ––– ID = 22A ns ––– R G = 4.3Ω ––– R D = 11Ω,See Fig. 10 ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 400V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
––– ––– –––
Max.
1180 22 28
Units
mJ A mJ
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Typ.
––– 0.24 –––
Max.
0.45 ––– 40
Units
°C/W
Diode Characteristics
Min. Typ. Max. Units IS
ISM
VSD trr Qrr ton
2
Conditions D MOSFET symbol 22 ––– ––– showing the A G integral reverse 88 ––– ––– S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 22A, VGS = 0V ––– 570 850 ns TJ = 25°C, IF = 22A ––– 6.1 9.2 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFP22N50APbF
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1
10
4.5V
0.1
0.01 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
1 0.1
4.5V 20µs PULSE WIDTH TJ = 150 ° C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 22A
I D , Drain-to-Source Current (A)
TJ = 150 ° C
10
2.5
2.0
TJ = 25 ° C
1
1.5
1.0
0.5
0.1 4.0
V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFP22N50APbF
100000
VGS , Gate-to-Source Voltage (V)
10000
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
20
ID = 22A VDS = 400V VDS = 250V VDS = 100V
16
C, Capacitance (pF)
Ciss
1000
12
Coss
100
8
Crss
10
4
1 1 10 100 1000
A
0
FOR TEST CIRCUIT SEE FIGURE 13
0 20 40 60 80 100 120
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typi.