IRFP22N50A

IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 120 32 52 Single D FEATURES 500 0.23 Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT Fully Characterized Capacitance and Avalanche Voltage and Current Compliant to RoHS Directive 2002/95/EC TO-247AC APPLICATIONS Switch Mode Power Supply (SMPS) G Uninterruptable Power Supply High Speed Power Switching S D G S N-Channel MOSFET TYPICAL SMPS TOPOLOGIES Full Bridge Converters Power Factor Correction Boost ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247AC IRFP22N50APbF SiHFP22N50A-E3 IRFP22N50A SiHFP22N50A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw LIMIT 500 ± 30 22 14 88 2.2 1180 22 28 277 4.8 - 55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a. Repetitive rating; pulse width ...