Power MOSFET
IRFP22N50A, SiHFP22N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (...
Description
IRFP22N50A, SiHFP22N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 120 32 52 Single
D
FEATURES
500 0.23
Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Available
RoHS*
COMPLIANT
Fully Characterized Capacitance and Avalanche Voltage and Current Compliant to RoHS Directive 2002/95/EC
TO-247AC
APPLICATIONS
Switch Mode Power Supply (SMPS)
G
Uninterruptable Power Supply High Speed Power Switching
S D G S N-Channel MOSFET
TYPICAL SMPS TOPOLOGIES
Full Bridge Converters Power Factor Correction Boost
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-247AC IRFP22N50APbF SiHFP22N50A-E3 IRFP22N50A SiHFP22N50A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw LIMIT 500 ± 30 22 14 88 2.2 1180 22 28 277 4.8 - 55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V
Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque
Notes a. Repetitive rating; pulse width ...
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