2SA821

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA821 FEATURES TRANSISTOR (PNP) TO¡ª 92 Power dissipation PCM : 0.25 W£¨ Tamb=25¡æ£© Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ 1.EMITTER 2. COLLECTOR 3. BASE 1 2 3 ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat unless Test otherwise MIN specified£© TYP MAX UNIT V V V -1 -1 ¦Ì A ¦Ì A conditions Ic= -50¦Ì A £¬IE=0 IC= -0.1 mA , IB=0 IE= -50¦Ì A£¬IC=0 VCB=-150V, VEB= -4.5 V , IE=0 IC=0 -210 -210 -5 VCE=-3 V, IC= -5mA IC= -2mA, IB= -0.2mA VCE=-5V, IC= -2mA 56 270 -0.6 V MHz f T 30 Output capacitance Cob VCE=-10V,IE=0,f=1MHz 12 pF CLASSIFICATION OF hFE Rank Range N 56-120 P 82-180 Q 120-270 Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com TO-92 PACKAGE OUTLINE DIMENSIONS D D1 A A1 E b ¦Õ e e1 Symbol A A1 b c D D1 E e e1 L Ö Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min L Dimensions In Inches Max 0.146 0.055 0.022 0....