2SA821S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SA821S TRANSISTOR (PNP) 1. EMITTER FEATURES z High Breakdown Voltage 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -210 -210 -5 -0.03 250 500 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Cob fT Test conditions Min -210 -210 -5 -1 -1 56 8 50 270 -0.6 V pF MHz Typ Max Unit V V V μA μA IC= -0.05mA,IE=0 IC=-0.1mA,IB=0 IE=-0.05mA,IC=0 VCB=-150V,IE=0 VEB=-4.5V,IC=0 VCE=-3V, IC=-5mA IC=-2mA,IB=-0.2mA VCB=-10V,IE=0, f=1MHz VCE=-5V,IC=-2mA CLASSIFICATION OF hFE RANK RANGE N 56-120 P 82-180 Q 120-270 A,Dec,2010 Free Datasheet http://www.Datasheet4U.com ...