SKR12

SKR 12,4 Qu bond Absolute Maximum Ratings Symbol VRRM IF(AV) i2t IFSM Tjmax Conditions Tj = 25 °C, R I = 0.2 mA Ts = 80 °C, T j = 150 °C Tj = 150 °C, 10 ms, sin 180° 10 ms sin 180° Tj = 25 °C Tj = 150 °C Values 1600 190 26500 3200 2300 150 Unit V A A2s A A °C DIODE IF(DC) = 235 A VRRM = 1600 V Size: 12,4 mm x 12,4 mm SKR 12,4 Qu bond Electrical Characteristics Symbol IR VF V(TO) rT trr Conditions Tj = 25 °C, V RRM Tj = 120 °C, VRRM Tj = 25 °C, F I = 160 A Tj = 125 °C, IF = 160 A Tj = 125 °C Tj = 125 °C Tj = 25 °C, ± 1 A min. typ. max. 0.2 1.1 Unit mA mA V V V mΩ µs 1 0.9 1.21 1.1 0.83 1.0 34 Features high current density due to mesa technology high surge current compatible to thick wire bonding compatible to all standard solder processes Thermal Characteristics Symbol Tj Tstg Tsolder Tsolder Rth(j-s) 10 min. 5 min. soldered on 0,38 mm DCB, reference point on copper heatsink close to the chip 0.27 Conditions min. -40 -40 typ. max. 150 150 250 320 Unit °C °C °C °C K/W Typical Applications* uncontrolled rectifier bridges Mechanical Characteristics Symbol Raster size Area total Anode Cathode Wire bond Package Chips / Package Conditions Values 12.4 x 12.4 153.76 bondable (Al) solderable (Ag/Ni) Al, diameter ≤ 500 µm tray 36 Unit mm2 mm2 pcs SKR © by SEMIKRON Rev. 1 – 19.02.2010 1 http://www.Datasheet4U.com/ SKR 12,4 Qu bond This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifi...