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PMEG45A10EPD

NXP

10 A low VF MEGA Schottky barrier rectifier

CF P1 5 PMEG45A10EPD 16 April 2014 45 V, 10 A low VF MEGA Schottky barrier rectifier Product data sheet 1. General d...


NXP

PMEG45A10EPD

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CF P1 5 PMEG45A10EPD 16 April 2014 45 V, 10 A low VF MEGA Schottky barrier rectifier Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOT1289 (CFP15) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Average forward current: IF(AV) ≤ 10 A Reverse voltage: VR ≤ 45 V Low forward voltage High power capability due to clip-bonding technology and heat sink Small and thin SMD power plastic package, typical height 0.78 mm 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Freewheeling application Reverse polarity protection Low power consumption application 4. Quick reference data Table 1. Symbol IF(AV) VR VF IR Quick reference data Parameter average forward current reverse voltage forward voltage reverse current Conditions δ = 0.5; f = 20 kHz; Tsp ≤ 130 °C; square wave Tj = 25 °C IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C; pulsed VR = 10 V; tp ≤ 3 ms; δ = 0.3; Tj = 25 °C; pulsed VR = 45 V; tp ≤ 3 ms; δ = 0.3; Tj = 25 °C; pulsed 150 500 µA 13 30 µA 473 45 540 V mV Min Typ Max 10 Unit A Scan or click this QR code to view the latest information for this product http://www.Datasheet4U.com/ NXP Semiconductors PMEG45A10EPD 45 V, 10 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pin 1 2 3 Pinning...




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