SCS215AM

SCS215AM SiC Schottky Barrier Diode lOutline Data Sheet VR IF QC lFeatures 1) Shorter recovery time 650V 15A 23nC TO-220FM (1) (2) lInner circuit 2) Reduced temperature dependence 3) High-speed switching possible (1) Cathode (2) Anode (1) (2) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 15* 55* Surge no repetitive forward current IFSM 1 2 3 Tube 50 C SCS215AM Reel size (mm) Tape width (mm) Unit V V A A A A A W °C °C 200* 43* 4 Repetitive peak forward current Total power disspation Junction temperature Range of storage temperature IFRM PD Tj Tstg 34*5 39* 6 175 -55 to +175 *1 Tc=55°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. http://www.Datasheet4U.com 1/5 2014.01 - Rev.A SCS215AM lElectrical characteristics (Tj = 25°C) Values Parameter DC blocking voltage Symbol VDC Conditions Min. IR =0.3mA IF=15A,Tj=25°C Forward voltage VF IF=15A,Tj=150°C IF=15A,Tj=175°C VR=600V,Tj=25°C Reverse current IR VR=600V,Tj=150°C VR=600V,Tj=175°C VR=1V,f=1MHz Total capacitance Total capacitive charge Switching time C VR=600V,f=1MHz Qc tc VR=400V,di/dt=350A/ms VR=...