SKP253

MOS FET SKP253 ■Features Low on-resistance Low input capacitance Avalanche energy capability guaranteed December 2005 ■Package---TO-263 ■Applications PDP driving High speed switching ■Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25°C) Characteristic Sym Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Channel Temperature Storage Temperature bol VDSS 25 VGSS ±3 ID ± ID(pulse) 1) ± PD 40 EAS 2) 16 IAS 20 Tch 15 Tstg Rating 0 0 20A 80A (Tc=25°C) 0 Unit V V A A W mJ A 0 - 55 to 150 °C °C 1) PW≤100μs, duty cycle≤1% 2 ) V DD=20V, L=740μH, ILp=20A, unclamped, RG=50Ω. See Fig.1 . Sanken Electric Co.,Ltd. http://www.sanken-ele.co.jp/en/ 1/9 T02-004EA-051124 http://www.Datasheet4U.com MOS FET SKP253 Electrical characteristics December 2005 (Ta=25°C) Characteristic S ymbol Test Conditions Limits MIN. TYP 0 ±100 100 0 17 86 1600 280 50 30 95 4.5 . MAX. Unit V nA μA V S mΩ Drain to Source breakdown Voltage Gate to Source Leakage Current Drain to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain to Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Diode Forward Voltage V(BR)DSS IGSS IDSS VTH Re(Yfs) V RDS(on) Ciss Coss Crss ID=100μA,VGS=0V 25 VGS=±30V VDS=250V, VGS=0V VDS=10V, ...